Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-Band

The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal–organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm−1 and maximum saturated drain currents above 1 A mm−1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering of only 20 mV V−1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm−1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm−1 and associated power‐added efficiencies of 56% and 40% are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure.

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“…b) Benchmark of P out and associated PAE with Al x Ga (1− x ) N/GaN‐based devices ( x ≤ 0.3) with Schottky gate operated at 28–31 GHz. [ 38–47 ]…”

Section: Hemt Resultsmentioning

confidence: 99%

“…Figure 4. a) Power sweep at different V DS on QF150. b) Benchmark of P out and associated PAE with Al x Ga (1Àx) N/GaN-based devices (x ≤ 0.3) withSchottky gate operated at 28-31 GHz [38][39][40][41][42][43][44][45][46][47]. …”

mentioning

confidence: 99%

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Chen¹,

Wen²,

Thorsell

et al. 2022

Physica Status Solidi (a)

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“…On the contrary other presented works are complex multi-stage amplifier. In [13,14,15] corporate combiner topology where FET's are arranged in 2:4:8 topology, have reported less PAE than the proposed amplifier. The commercially available PA by UMS foundry on same FET is presented in [16] which is a 3 stage amplifier having similar performance.…”

Section: Power Amplifier Analysismentioning

confidence: 87%

“…The commercially available PA by UMS foundry on same FET is presented in [16] which is a 3 stage amplifier having similar performance. Designs from [13,14,15,16] offers good performance parameters at the cost of more FET's. The proposed design matches their performance by using only single FET.…”

Section: Power Amplifier Analysismentioning

confidence: 99%

Area Efficient and Linear MMIC Based Ka Band Power Amplifier for 5G Communication Systems

AGARWAL,

PATEL,

INAMDAR

2023

JICS

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This work presents a monolithic microwave integrated circuit (MMIC) based power amplifier (PA) with single 150 nm GaN high electron mobility transistor (HEMT) using broadband matching. For the proposed amplifier, two stage L-type biasing network is designed. In order to provide good linearity, low Q, broader bandwidth and optimized chip area, band pass filter (BPF) type matching network is proposed. The topology and parameter selection is done by performing proper load pull analysis. This helps in achieving wide band matching to maintain low Q factor. Thus the proposed amplifier is evaluated with post layout EM simulation data. For the 26 GHz band of 5G communication, proposed amplifier has a small signal gain of 11 dB for 21-27.4 GHz. The amplifier offers 33.42 dBm saturated output power and good linearity. The designed PA provides 31.35 dBm output power, 26% power added efficiency (PAE) and 29% drain efficiency (DE) at 1 dB compression with IP3 of 39.67 dBm for 26 GHz band. The designed PA has less complexity and small chip area of 4.3 mm2.

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Design of Ka-Band Power Amplifier and Low-Noise Amplifier for 5G Communication Systems

Agarwal,

Patel,

Inamdar

2024

Next Generation Wireless Communication

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Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-Band

Cited by 6 publications

References 3 publications

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Area Efficient and Linear MMIC Based Ka Band Power Amplifier for 5G Communication Systems

Design of Ka-Band Power Amplifier and Low-Noise Amplifier for 5G Communication Systems

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