2015
DOI: 10.1063/1.4933093
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Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Abstract: We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and… Show more

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Cited by 49 publications
(33 citation statements)
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“…For this geometry, the azimuthal mode of order g = 21 is found at a frequency of 393.58 THz, with a moderate Q ≈ 20, 000, well within the range of what can be realistically fabricated. 29 We calculate the vectorial components of this mode using a finite-element eigenmode solver (Comsol Multiphysics), showing the resultant intensity distribution in the inset of Fig. 1.…”
Section: Resonant Chiral Emissionmentioning
confidence: 99%
“…For this geometry, the azimuthal mode of order g = 21 is found at a frequency of 393.58 THz, with a moderate Q ≈ 20, 000, well within the range of what can be realistically fabricated. 29 We calculate the vectorial components of this mode using a finite-element eigenmode solver (Comsol Multiphysics), showing the resultant intensity distribution in the inset of Fig. 1.…”
Section: Resonant Chiral Emissionmentioning
confidence: 99%
“…GaN films are drawing increasing attention [8][9][10][11][12][13][14]. In particular, the absence of twophoton and even three-photon absorption at telecommunication wavelengths holds much promise for the use of GaN waveguides in all-optical nonlinear signal processing applications.…”
Section: Motivated By the Above Advantages Waveguides And Light-guidmentioning
confidence: 99%
“…A comparison with those of the optimized cavity concludes that Q m , g 0 /2π, and f m · Q m decrease slightly while Q o is more sensitive to fabrication errors due to the increased reflection loss from the OMC mirrors. A recent paper62 reports an experimentally demonstrated Q o of 55,000 at the wavelength of 788.35 nm in GaN ring resonators with the absorption coefficient ( α ) of ~60 cm −1 (ref. 63).…”
Section: Discussionmentioning
confidence: 99%