2021
DOI: 10.1016/j.ijleo.2021.168004
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Broadband plasmonic absorber as a solar cell with conformal arrangement and various topologies

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Cited by 2 publications
(2 citation statements)
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“…This could be attributed to the extremely large extinction coefficient [2], low cost [3], better charge mobility [4], low trap state density [5], low excitons' binding energy [6], along with changeable band gap accreditation [7] of organic absorbing layers (OALs), are all desirable priorities. The novel concept promotes a rational methodology for obtaining blend donor-acceptor (D-A) molecules with advantageous corresponding OAL properties to achieve efficient OSCs [8]. The outstanding growth in power conversion efficiency (PCE) over the last few previous works, from 3.8% in 2009 [9] to 17.8% in 2022 [10], has inspired the research community to continue developing the OSC.…”
Section: Introductionmentioning
confidence: 99%
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“…This could be attributed to the extremely large extinction coefficient [2], low cost [3], better charge mobility [4], low trap state density [5], low excitons' binding energy [6], along with changeable band gap accreditation [7] of organic absorbing layers (OALs), are all desirable priorities. The novel concept promotes a rational methodology for obtaining blend donor-acceptor (D-A) molecules with advantageous corresponding OAL properties to achieve efficient OSCs [8]. The outstanding growth in power conversion efficiency (PCE) over the last few previous works, from 3.8% in 2009 [9] to 17.8% in 2022 [10], has inspired the research community to continue developing the OSC.…”
Section: Introductionmentioning
confidence: 99%
“…The input material parameters used in the P 3 HT: PC 61 BM OSC device is based on previously tested values for the various consecutive layers. Here the symbols used for parameters are thickness (W), bandgap (E g ), relative permittivity (ε r ), electron affinity (χ i ), electron mobility (μ n ), hole mobility (μ p ), effective DOS at CB (N C ), effective DOS at VB (N V ), electron trap density (N e exp ), hole trap density (N h exp ), electron tail slope (N n U ), hole tail slope (N h U ), respectively[8][9][10][11][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. Performance of OAL thickness with variable TCO in OSC After the optimization of TCO's thickness, the maximum value of device parameters would be achieved through the optimum thickness of OAL.…”
mentioning
confidence: 99%