Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Y.; Sonobe, Y.; Takanashi, Kōki

doi:10.1063/1.5007766

Cited by 4 publications

(1 citation statement)

References 26 publications

(19 reference statements)

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“…Here, an electrical current of about 100 µA and an external magnetic field of up to ±50 mT along the <110> direction of the CFMS layer were applied during the measurements at room temperature. The details of the magnetotransport properties have been published elsewhere 9 .…”

Section: Methodsmentioning

confidence: 99%

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Jackson

Sun

Kubota

et al. 2018

Sci Rep

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Current information technology relies on the advancement of nanofabrication techniques. For instance, the latest computer memories and hard disk drive read heads are designed with a 12 nm node and 20 nm wide architectures, respectively. With matured nanofabrication processes, a yield of such nanoelectronic devices is typically up to about 90%. To date the yield has been compensated with redundant hardware and software error corrections. In the latest memories, approximately 5% redundancy and parity bits for error corrections are used, which increase the total production cost of the devices. This means the yield directly affects the device costs. It is hence critical to increase the yield in nanofabrication. In this paper, we have applied our recently developed method to image buried interfaces in combination with chemical analysis to evaluate magnetic tunnel junctions and have revealed their different magnetoresistance ratios caused by the presence of materials formed at the junction edges. The formation of these materials can be avoided by optimising the junction patterning process to remove residual carbon introduced from resist. Our imaging method with chemical analysis have demonstrated a significant potential for the improvement of junction performance, resulting in higher yields. This can be used as a quality assurance tool in a nanoelectronic device production line.

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Section: Methodsmentioning

confidence: 99%

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Jackson

Sun

Kubota

et al. 2018

Sci Rep

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Ta and Ru seed layers effect on the magnetic and optical properties of Ru/Co 60 Fe 20 V 20 and Ta/Co 60 Fe 20 V 20 films

Chen

Chang

Liu

et al. 2018

Journal of Magnetism and Magnetic Materials

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Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

Chumak

Pacewicz

Lynnyk

et al. 2021

Sci Rep

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Co2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are among the most promising thin film materials for spintronic devices due to a high spin polarization, low magnetic damping and giant/tunneling magnetoresistance ratios. Despite numerous investigations of Heusler alloys magnetic properties performed up to now, magnetoelastic effects in these materials remain not fully understood; due to quite rare studies of correlations between magnetoelastic and other magnetic properties, such as magnetic dissipation or magnetic anisotropy. In this research we have investigated epitaxial CFMS and CFGG Heusler alloys thin films of thickness in the range of 15–50 nm. We have determined the magnetoelastic tensor components and magnetic damping parameters as a function of the magnetic layer thickness. Magnetic damping measurements revealed the existence of non-Gilbert dissipation related contributions, including two-magnon scattering and spin pumping phenomena. Magnetoelastic constant B11 values and the effective magnetic damping parameter αeff values were found to be in the range of − 6 to 30 × 106 erg/cm3 and between 1 and 12 × 10–3, respectively. The values of saturation magnetostriction λS for CFMS Heusler alloy thin films were also obtained using the strain modulated ferromagnetic resonance technique. The correlation between αeff and B11, depending on magnetic layer thickness was determined based on the performed investigations of the above mentioned magnetic properties.

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Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Cited by 4 publications

References 26 publications

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Ta and Ru seed layers effect on the magnetic and optical properties of Ru/Co 60 Fe 20 V 20 and Ta/Co 60 Fe 20 V 20 films

Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

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