2015
DOI: 10.1063/1.4922917
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Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids

Abstract: The responsivity (R) of a thin film photodetector is proportional to the product of its photo-induced carrier density (n) and mobility (μ). However, when choosing between layer heterojunction (LH) and bulk heterojunction (BH) field-effect phototransistors (FEpTs), it is still unclear which of the two device structures is more conducive to photodetection. A comparison study is performed on the two structures based on polymer and PbS quantum dot hybrids. Both devices exhibit ambipolar behavior, with μE ≈ μH = 3.… Show more

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Cited by 15 publications
(8 citation statements)
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“…Commonly, the three‐terminal configuration of field‐effect transistors (FETs), compared to the two‐terminal device, can improve the performance of the photodetector by reducing noise and amplifying the electrical signal. Incorporating organic semiconductors and their hybrids into FETs has been proved to be a feasible way to convert incident photons into electrical signals …”
Section: Comparison Of the Device Performance For The Present Work Anmentioning
confidence: 99%
“…Commonly, the three‐terminal configuration of field‐effect transistors (FETs), compared to the two‐terminal device, can improve the performance of the photodetector by reducing noise and amplifying the electrical signal. Incorporating organic semiconductors and their hybrids into FETs has been proved to be a feasible way to convert incident photons into electrical signals …”
Section: Comparison Of the Device Performance For The Present Work Anmentioning
confidence: 99%
“…Such devices can be used to fabricate high-performance polymer phototransistors. [17][18][19][20][21] Phototransistors based on poly(3-hexylthiophene) (P3HT)/PbS QDs and poly(N-alkyl diketopyrrolo-pyrroledithienylthieno[3,2-b] thiophene) (DPP-DTT)/ [6,6]-phenyl-C61-butyric acid methylester (PCBM) hybrid films were explored by Yan's and Zhao's groups, respectively. 18,19 Both of their results demonstrated ultrahigh responsivity under NIR illumination.…”
Section: Introductionmentioning
confidence: 99%
“…17,20,21 For example, Zhang et al reported bulk-as well as layer-heterojunction phototransistors based on poly[2methoxy-5-(20-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) and PbS QDs with photoresponsivities of 100 mA W −1 and 10 A W −1 , respectively. 17 The NIR OPTs based on a hybrid planar-bulk heterojunction structure of CuPc/PbPc:PTCDA exhibited a photoresponsivity of 322 mA W −1 and a maximal photo-current/dark current ratio of 9.4 × 10 2 . 21 These numbers are much lower than Yan's and Zhao's results.…”
Section: Introductionmentioning
confidence: 99%
“…Organic phototransistors, i.e., OFETs in which an incident light is used in addition to a gate field to modulate the charge-carrier density inside the channel, have many advantages over their inorganic counterparts, such as the tunability of their optoelectronic properties via the molecular design and their possibility to be assembled on nonplanar supports opening perspectives toward their flexible thus wearable applications. Low-dimensional organic architectures such as crystalline micro/nanowire, microribbon and quantum dot , structures have showed high photosensitivity and high charge carrier properties. Among organic semiconducting molecules used as active components in efficient phototransistors, perylene di-imide (PDI) derivatives are particularly suitable because of their characteristic absorption in the visible region combined with the capacity to transport electrons. One of the major limitations of organic transistors, especially those based on n -type systems, is their air sensitivity.…”
Section: Introductionmentioning
confidence: 99%