Bulk GaN single crystals: growth conditions by flux method

Growth of bulk GaN single crystals by flux method

“…The GaN crystals were separated from the other substances by dissolving these substances in HCl solution. [12,[20][21][22][23] A series of experiments were conducted to investigate the possibility of growing bulk GaN crystals in the Li-Ga-N ternary system under different growth conditions. The main results are summarized in Table 1.…”

Development of 2" AlN Substrates Using SiC Seeds

“…The extreme parameters needed for the HNPSG and the PCSG are reduced in the ammonothermal (Purdy et al, 2003;Yoshikawa et al, 2004) and the alkali metal flux methods (Aoki et al, 2002;Onda et al, 2002;Song et al, 2003;Yano et al, 2000). The former is similar to the well-known hydrothermal growth of quartz crystals (Iwasaki & Iwasaki, 2002) (that closely reproduces the growth of amethyst in nature (Carter & Norton, 2007)) with supercritical ammonia instead of water.…”

“…It is speculated that nitrogen in N 2 molecule absorbed onto the Ga-Na melt surface receives electrons from Na, that weakens the N 2 bonds and causes the dissociation of N 2 into two negatively charged radicals at much lower temperature and pressure (Aoki et al, 2002). The use of lithium instead of sodium is more promising since the ability of the former to fix nitrogen is higher and that allows one to achieve the growth of GaN single crystals under the pressure of 1-2 atm (Song et al, 2003). The sodium flux growth is performed in either a closed or in an open tube (Aoki et al, 2002;Onda et al, 2002).…”

“…It is speculated (Grzegory et al, 2002) that the nucleation rates at the different faces can vary greatly due to the different geometry of the 2D nuclei (hexagonal or square, differing in the number of atoms in the nucleus as well as the number of the broken bonds). In the Li flux method (Song et al, 2003) liquid gallium infiltrates into porous Li 3 N and reacts to produce GaLi 3 N 2 and metal Li. In the case of the excess of Li 3 N no growth of GaN has been observed and only GaLi 3 N 2 has been formed.…”

Bulk GaN single crystal growth for substrate by solvent‐thermal method

“…However, the growth of GaN single crystals from melt (Czochralski, Bridgman method) requires temperatures as high as 1600 °C and N 2 gas pressure as high as 1,000 MPa [5]. Recently, scientists have been actively searching for methods to grow GaN bulk single crystals at low temperatures and low pressures [6][7][8][9]. In this study, we grew bulk GaN single crystals using the solvent-thermal method.…”