Silicon Carbide 2009
DOI: 10.1002/9783527629053.ch1
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Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

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Cited by 5 publications
(4 citation statements)
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“…The surface of the bottom of the crystal is slightly convex. The order of the BPD density at the bottom of the crystal is 10 4 cm –2 , and it shows 6-fold symmetry on the basal plane, which is consistent with the experimental data …”
Section: Numerical Resultsmentioning
confidence: 99%
“…The surface of the bottom of the crystal is slightly convex. The order of the BPD density at the bottom of the crystal is 10 4 cm –2 , and it shows 6-fold symmetry on the basal plane, which is consistent with the experimental data …”
Section: Numerical Resultsmentioning
confidence: 99%
“…For the purpose of this chapter it is sufficient to provide an overview of the technology as it pertains to future biomedical devices, hence a simple discussion follows with sufficient references to fill in the details. For a review of how bulk hexagonal crystals of SiC are grown the reader is referred to several excellent references [1,8,9] where one can learn what is the state-of-the-art is and the key characteristics of these commercially available substrates. For biomedical devices to be cost-effective the most promising materials processing approach involves the synthesis of thin films.…”
Section: Silicon Carbide-materials Overviewmentioning
confidence: 99%
“…77 Furthermore, the densities of the 1-D (i.e., micropipe), two-dimensional (i.e., stacking fault), and three-dimensional 8 (i.e., polytype switch, carbon inclusion, and silicon droplet) defects in f-SiC have been drastically decreased to the negligible levels 6,9 by applying the FSGP method for the growth of f-SiC epilayers. Meanwhile, the source SiC material for FSGP is prepared via the modified physical vapor transport technique developed by Wellmann et al, 8,10,11 where the stable nitrogen doping and low dislocation densities in the source SiC material have been realized.…”
Section: Introductionmentioning
confidence: 99%