Bulk photoconductivity of CVD diamond films for UV and XUV detection

Lefeuvre, Élie; Achard, Jocelyn; Castex, M. C.; Schneider, H.; Beuillé, C.; Tardieu, André

doi:10.1016/s0925-9635(02)00301-1

Cited by 19 publications

(3 citation statements)

References 11 publications

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“…Canali, et al [11,12] used an accelerated electron beam and Pan, et al [13] used soft X-rays from a synchrotron as the injection quanta. Ultra violet (UV) pulsed laser light has also been used to measure charge-carrier mobilities in diamond [14][15][16]. Use of a high power UV laser with a pulse width shorter than 1 ns can make easy to measure carrier transit times shorter than 10 ns.…”

Section: Introductionmentioning

confidence: 99%

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Fujita¹,

Homma²,

Oshiki³

et al. 2005

Diamond and Related Materials

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There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift-velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse-width. In order to realize response times faster than 20 ns, we employed a 50 ohm coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns.

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Section: Introductionmentioning

confidence: 99%

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Fujita¹,

Homma²,

Oshiki³

et al. 2005

Diamond and Related Materials

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“…[1][2][3][4][5] With these excellent characteristics, the diamond film is used in many applications that include high-temperature semiconductors, power semiconductors, biosensors, and mechanical parts. [6][7][8][9] The film is generally crystallized from the nucleus of the crystal.…”

Section: Introductionmentioning

confidence: 99%

Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition

Yh¹,

Fs²,

S³

et al. 2016

j nanosci nanotechnol

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In this study, diamond films were prepared using the microwave plasma-enhanced chemical vapor deposition (PECVD) system, which included a DC bias system to enhance the nucleation of the films. The films were synthesized on Si wafers with different ratios of methane (CH4) and hydrogen (H2) gases. We have studied the effects of the CH4-to-H2 ratio on the structural and optical properties of diamond films. The thickness and surface profile of the films were characterized via field emission scanning electron microscopy (FE-SEM). Raman was used to investigate the structural properties of the diamond films. The refractive indexes as functions of the CH4-to-H2 ratio were measured using an ellipsometer. The FE-SEM analysis showed that the 3 and 5 sccm CH4 created diamond films. The Raman analysis indicated that a nanocrystalline diamond film was formed at 3 sccm; a general diamond film, at 5 sccm; and films similar to the a-C:H film, at 7 sccm. The ellipsometer measurement showed that the refractive index of the synthesized diamond film was around 2.42 at 3 sccm. This value decreased as the CH4 volume increased.

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“…To create electron-hole pairs to initiate TOF measurements, a pulsed electron beam [3,4], soft x-rays [5], or a UV laser [6,7,8] whose energy were greater than 5.49 eV were used as injection quanta. For self-standing diamond crystals, a TOF measurement system that was consisted of a 213 nm UV pulsed laser, passive circuits and a digital oscilloscope was previously developed by the authors [9,10]; good linearity of output signals and fast response, i.e.…”

Section: Introductionmentioning

confidence: 99%

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Fujita¹,

Oshiki²,

Kaneko³

et al. 2006

Diamond and Related Materials

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Prime Novelty Statement:A fast TOF measurement system for transport behavior of free-charged carriers in intrinsic diamond films by using a UV pulsed laser was developed. The UV laser light narrowed to less than 80 μm widths could locally create hole-electron pairs in selected locations on a diamond film between two separated electrodes on the surface. This system made it possible to measure true behavior of charge carriers in the diamond films, because charge carriers run in diamond without disturbance caused by laser irradiation. In addition, the local irradiation system succeeded to reduce an influence of photoelectrons created at electrodes by laser irradiation. For one of diamond film used for confirmation of the TOF system, transit time of holes was measured as 4.7 ns with covering a distance of 250 μm. Authorship Statement:The submission of the manuscript has been approved by all co-authors. A fast TOF measurement system with 150 ps time resolution for transport behavior of free charge carriers in an intrinsic diamond film by using a UV pulsed laser was developed. The 213nm UV laser light narrowed to approximately 80 μm widths could locally create holeelectron pairs in selected locations on a diamond film between two parallel electrodes on the surface. This system measured accurate charge transport characteristics in a diamond film, because created charge carriers moved in a part of the diamond film where did not get any influence from the laser irradiation. Diamond samples used for verification of the TOF system were intrinsic CVD diamond films with thickness between 4 to 10 μm grown on HP/HT diamond substrates. Transit time of holes for one diamond film was 4.7 ns with a traverse distance of 250 μm. The local irradiation of laser made it possible to measure transport characteristics of electrons and holes separately. In addition, it substantially reduced influence of photoelectron, because laser beam did not irradiate electrodes. Through several examinations, excellent reliability of the TOF system was confirmed.

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Bulk photoconductivity of CVD diamond films for UV and XUV detection

Cited by 19 publications

References 11 publications

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

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