Bulk silicon micromachining using porous silicon sacrificial layers

Kaltsas, G.; Nassiopoulos, A. G.

doi:10.1016/s0167-9317(96)00209-2

Cited by 37 publications

(15 citation statements)

References 3 publications

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“…Nevertheless, their chemical resistance to HF is very limited. 50 In the case of a SU8 photoresist, for example, it does not exceed a few hours, at very low current densities. 51 In the field of insulating hard masks, nitride layers (Si x N y ) and silicon oxides are widespread materials.…”

Section: Porous Silicon Localizationmentioning

confidence: 99%

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Porous silicon for electrical isolation in radio frequency devices: A review

Gautier

Leduc

2014

Applied Physics Reviews

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Section: Porous Silicon Localizationmentioning

confidence: 99%

“…52,53 But, the silicon oxide must be protected against the HF chemical dissolution by a thin polycrystalline silicon layer. 50 In the case of nitrides, the stoichiometry is a crucial parameter. Indeed, if the N/Si ratio decreases, the etch rate of the mask is drastically reduced.…”

Section: Porous Silicon Localizationmentioning

confidence: 99%

Porous silicon for electrical isolation in radio frequency devices: A review

Gautier

Leduc

2014

Applied Physics Reviews

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“…However, nonstoichiometric silicon nitride is a good masking material. The best conventional mask consists of a polycrystalline Si layer on top of Si dioxide [37,38]. Besides, ultrathin (<1 nm) carbonaceous masking achieved by local electron beam-induced deposition led to a high selectivity of PSi formation [39].…”

Section: Effect Of Anodization Conditionsmentioning

confidence: 99%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

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“…The PS is firstly famous for its universal utilizations as the sacrificial layers in the manufactures of micro-electromechanical systems (MEMS) [1] . Furthermore, since the discovery of its visible photoluminescence, PS became an interesting material for its applications on optoelectronic devices [2] .…”

Section: -0126-03 Doimentioning

confidence: 99%

A robust method to measure residual stress in micro-structure

Kang

Qiu

Lei

2007

Optoelectron. Lett.

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An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectroscopy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics. CLC number: TP206 + 1 Document code: A Article ID: 1673-1905(2007) 02-0126-03 DOIThe micro-structures, applied in optoelectronics and microelectronics, are mostly composed of materials in silicon family such as crystal silicon, silica, and porous silicon (PS). The PS is firstly famous for its universal utilizations as the sacrificial layers in the manufactures of micro-electromechanical systems (MEMS) [1] . Furthermore, since the discovery of its visible photoluminescence, PS became an interesting material for its applications on optoelectronic devices [2] . Besides, PS is often used as a substrate for growing certain semiconductor films such as PbTe [3] .Porous silicon is seldom made or used in free-standing, but as a film on monocrystalline silicon wafer substrate. In another word, the structure of PS film and bulk silicon substrate is a basic unit in the components of PS. This structure is fabricated by etching the porous silicon film, from several to hundreds of micron in thickness and several to tens of nanometer in pore size, on the surface of monocrystalline silicon wafer by chemical or electrochemical means [4] Since they are from the same wafer, the Porous silicon has the similar structure with its substrate, monocrystalline silicon. But its lattice constant is more or less larger than its substrate. For instance, when the porosity is 55~75%, the lattice constant of PS is 1~3‰ larger than that of the bulk silicon [5] . Due to this difference, the porous silicon film has a lattice mismatch with silicon substrate on their interface, which induces residual stresses in both the film and the * Antrag GZ 398,Ghinesisch-Deutsches Zentrum f u r Wissenschaftsf o rderung.

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Bulk silicon micromachining using porous silicon sacrificial layers

Cited by 37 publications

References 3 publications

Porous silicon for electrical isolation in radio frequency devices: A review

Porous silicon for electrical isolation in radio frequency devices: A review

Silicon Nanocrystals in Porous Silicon and Applications

A robust method to measure residual stress in micro-structure

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