Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Carole, Davy; Berckmans, Stéphane; Vo-Ha, Arthur; Lazar, Mihai; Tournier, Dominique; Brosselard, Pierre; Soulière, Véronique; Auvray, Laurent; Ferro, Gabriel; Brylinski, Christian

doi:10.4028/www.scientific.net/msf.717-720.169

Cited by 14 publications

(18 citation statements)

References 5 publications

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“…Such SEG-VLS growth has been demonstrated on both large and small circular area and square-shaped structure buried down to 1 lm. 9,10 The Al concentration levels of these structures have been measured by Secondary Ion Mass Spectrometry (SIMS) higher than N a ¼ 10 20 cm À3 . 11,12 Moreover, a high quality p þ (VLS)-n junction can be achieved by using this technique, which offers new prospects for the achievement of new power electronics devices, including deeply buried peripheral protection zones such as guard rings or Junction Barrier Schottky (JBS) structures.…”

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confidence: 99%

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Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

Thierry-Jebali

Vo-Ha

Carole

et al. 2013

Applied Physics Letters

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This work reports on the performances of ohmic contacts fabricated on highly p-type doped 4H-SiC epitaxial layer selectively grown by vapor-liquid-solid transport. Due to the very high doping level obtained, the contacts have an ohmic behavior even without any annealing process. Upon variation of annealing temperatures, it was shown that both 500 and 800 °C annealing temperature lead to a minimum value of the Specific Contact Resistance (SCR) down to 1.3×10−6 Ω⋅cm2. However, a large variation of the minimum SCR values has been observed (up to 4×10−4 Ω⋅cm2). Possible sources of this fluctuation have been also discussed in this paper

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confidence: 99%

“…Due to the step bunched growth mode, we observe that the VLS layer surface is quite rough. 9,10 The ohmic contact was formed by depositing Ni(10 nm)/ Ti(40 nm)/Al(240 nm)/Ni(10 nm) metallic stacks by e-beam. Current-Voltage (I-V) measurements have been done on TLM patterns "as-deposited."…”

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confidence: 99%

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

Thierry-Jebali

Vo-Ha

Carole

et al. 2013

Applied Physics Letters

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“…4") are realized in the same time as the main junction either with ion implantation or by VLS [14]. The rings act as an equipotential spreader and hence decrease the electric field.…”

Section: B Guard Ringsmentioning

confidence: 99%

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Planson

Brosselard

Isoird

et al. 2014

2014 International Semiconductor Conference (CAS)

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International audienceThe development of high voltage devices is a great challenge. At least, railway and smart grids are examples of applications requiring high voltage devices. SiC power devices and technology seem to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (> 6.5 kV) applications compared to Gallium Nitride. Diamond also is considered as a promising material for the next generation power devices. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC and diamond devices, before combining some of them to reach higher and higher breakdown voltages. Finally, a new setup is under development in order to extract the ionization coefficients, compulsory to predict the breakdown voltage

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“…Highly p-type doped SiC can be obtained leading to considerable reduction of both the p-type SiC resistivity and of the specific resistance of the ohmic contacts formed on it. The technological process is detailed in [13] and is schematically presented in Fig. 6.…”

Section: Vapor-liquid-solid Growthmentioning

confidence: 99%

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Lazar¹,

Carole²,

Raynaud³

et al. 2015

2015 International Semiconductor Conference (CAS)

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P-type 4H-SiC layers formed by ion implantation need high temperature process generating surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 10 20 cm-3 range or more. The depth of this ptype layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated integrating p-type layers created by Al ion implantation or VLS growth. The P-type VLS layers improve the access resistances on the electrodes of the fabricated devices.

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Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Cited by 14 publications

References 5 publications

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

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