2021
DOI: 10.1103/physrevapplied.15.034017
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Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes

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Cited by 25 publications
(28 citation statements)
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“…( 1) is negligible and the orbit (V(t), I(t)) remains close to the I-V characteristic in the PDC regions, until it reaches either the peak or the valley, where it quickly jumps towards the other PDC region. Consequently, the voltage exhibits two slow stages and two fast stages in each period [36]. The quick jumps are perpendicular to the I-direction on the phase plane, and thus the current does not exhibit fast stages.…”
Section: Self-oscillations and Slow-fast Dynamicsmentioning
confidence: 99%
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“…( 1) is negligible and the orbit (V(t), I(t)) remains close to the I-V characteristic in the PDC regions, until it reaches either the peak or the valley, where it quickly jumps towards the other PDC region. Consequently, the voltage exhibits two slow stages and two fast stages in each period [36]. The quick jumps are perpendicular to the I-direction on the phase plane, and thus the current does not exhibit fast stages.…”
Section: Self-oscillations and Slow-fast Dynamicsmentioning
confidence: 99%
“…This corresponds to the nanoRTD biased with a constant input voltage. It is well known from the literature that micro and nanoscale RTDs exhibit self-oscillations (i.e., limit cycle) in both current and voltage when biased in the NDC region and respond with a constant, DC output (i.e., fixed point of equilibrium) when biased in either PDC region [28,[34][35][36][37]. Numerical simulations show that, the specific range of input bias voltage for which the RTD presented here exhibits self-oscillations lies in between V 0 = 613 mV and V 0 = 722.9 mV (see Fig.…”
Section: Self-oscillations and Slow-fast Dynamicsmentioning
confidence: 99%
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“…Various analytical works [ 20 , 21 , 22 ] have sought an improvement in the efficiency, a decrease in the dissipation power, and the optimization of parameters to obtain the highest peak-to-valley current ratio in resonant tunneling systems of various materials, which can improve the applicability in practical devices. Finally, in recent reports [ 23 , 24 ], resonant systems are evidenced as possible direct applications in communication systems for frequencies of the order of Gigahertz or the possibility of using RTDs as memory systems. Among the experimental developments in this area, in works such as those from Ryu and co-workers [ 25 ],a semitransparent cathode of indium tin oxide (ITO)/Ag/ITO is studied, developed as a resonant tunneling double-barrier structure for transparent organic light-emitting diodes.…”
Section: Introductionmentioning
confidence: 99%
“…During the refractory time, the device does not respond to stimuli. For RTD devices, the theoretical explanation of the excitability is elucidated in [ 17 ]. Excitable responses, such as spikes and bursts, act as the key mechanism of excitability in the dynamic behaviors of neurons and it is considered that information processing in the form of spikes is superior to traditional digital signaling and encoding [ 18 ].…”
Section: Introductionmentioning
confidence: 99%