Busbar design considerations for high power IGBT converters

Abstract

This paper addresses an important issue in the design and synthesis of high power IGBT converters, i.e. the layout and design of connection busbars. Parasitic inductance, caused by the physical dist,ance current has to flovv from the storage capacitors to the static switches and back, is the major constraint in developing a bus structure. This leads to non-ideal converter operation, namely voliage overshoot, voltage drop and resonance with snubber capacitors. By analyzing the currents and fields in and aroiund busbars, parasitic inductance can be predicted and limiited.

Analysis of the possibility to use 1200 V IGBT devices in snubberless medium power motor converters supplied from the 600 V mains

“…Typical inductance of an electrolytic capacitor for high current handling depends Typical inductance and stray capacitance of a bus structure are LB/fs55 to 20 nH and CsBL_5=5 to 10 rF [1], [2], [5].…”

“…80 (2) 45 (2) 70 (2) EoN[mJ] (30 (2) 40 (2) 40 (2) 60 2) ER [mJ (1) 22 (2) 30 (2) 17 (2) 30 ( (1) Nominal conditions IC= ICNOv1, VBUS =900 V and TJ=125 'C;…”

Switching Transient Analysis and Design of a Low Inductive Laminated Bus Bar for a T-type Converter

“…The use of a general connection may result in high stray inductances, which in turn lead to the following two problems [1]- [5]. First, stray inductances significantly influence the turn-off characteristics of power switching devices [1]- [3], especially high-power converters with large di/dt. Huge mutation currents may cause large voltage spikes in stray inductances, which could generate serious electromagnetic interference that affects electrical power systems or even cause damage to the semiconductor devices of converters.…”

Develop Parasitic Inductance Model for the Planar Busbar of an IGBT H Bridge in a Power Inverter

“…Because of the fast switching of IGBT, high di/dt results in high voltage drops on the inductances and at the same time, the inductances resonate with the junction capacitance or snubber capacitors of IGBTs [4]. It causes high voltage spikes which may kill IGBTs [1].…”

“…Paper [4] investigates the effects of busbar inductances on IGBT voltage spikes. Paper [5] calculates busbar inductances based time domain waveforms.…”