c139, VI.1.5.1 Binary nitrides and their solid solutions

Pies, W.; Weiss, A.

doi:10.1007/10201501_10

Key Element: N

DOI: 10.1007/10201501_10

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c139, VI.1.5.1 Binary nitrides and their solid solutions

W. Pies¹,

A. Weiss²

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Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates

Katzer

Nepal

Meyer

et al. 2015

Appl. Phys. Express

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RF-plasma MBE was used to epitaxially grow 4- to 100-nm-thick metallic β-Nb2N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality β-Nb2N is the substrate temperature. The X-ray characterization of films grown between 775 and 850 °C demonstrates β-Nb2N phase formation. The (0002) and X-ray diffraction measurements of a β-Nb2N film grown at 850 °C reveal a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that β-Nb2N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present.

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Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates

Katzer

Nepal

Meyer

et al. 2015

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

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c139, VI.1.5.1 Binary nitrides and their solid solutions

Cited by 1 publication

References 59 publications

Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates

Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates

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c139, VI.1.5.1 Binary nitrides and their solid solutions

Cited by 1 publication

References 59 publications

Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

Contact Info

Product

Resources

About

Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates

Epitaxial metallic β-Nb₂N films grown by MBE on hexagonal SiC substrates