CAD tools for efficient RF/microwave transistor modeling and circuit design

Abstract

In today's radiofrequency and microwave communication circuits, there is an ever-increasing demand for higher integration and miniaturization. This trend leads to massive computational tasks during simulation, optimization and statistical analyses, requiring robust modeling tools so that the whole process can be achieved reliably. In this paper, the authors proposed frequency-and timedomain computer-aided design tools that can characterize RF/microwave field effect and heterojunction bipolar transistors and efficiently predict a circuit performance. The proposed tools are demonstrated through examples.

Behavioral Modeling of Mixed-Mode Integrated Circuits

“…The generation of behavioral models is very useful to perform different design tasks, such as synthesis (Saad & Soliman, 2008) and sizing (Diaz-Madrid et al, 2008). The applications to analog design also include behavioral modeling of power (Suissa et al, 2010), carbon nanotube field-effect-transistors (Chek et al, 2010), statistical modeling (Li et al, 2010), efficient RF/microwave transistor modeling (Gaoua et al, 2010), etc. In all cases, the goal is not only to capture the dominant behavior (Beelen et al, 2010), but also to generate refined models to enhance high-level simulation (Alvarado et al, 2010;Vasilevski et al, 2009).…”

“…Steinhorst & L. Hedrich, 2010). Behavioral modeling is performed according to the kind of application, for example not only transistors models can be refined to work at radio frequency (RF) and microwave applications (Gaoua et al, 2010), but also integrated resistors can be refined to include parasitic effects (McAndrew, 2010). Additionally, transistors and parasitic elements can be modeled into hardware description languages (Alvarado et al, 2010), so that the development time of integrated circuits may be shrinked and the models can be tested before they are included into commercial simulators, namely SPICE and ELDO.…”

Efficient Time-Domain Noise Modeling Approach for Millimeter-Wave Fets

“…It consists on three coupled electrodes (i.e., three active transmission lines). In the lower part of the microwave spectrum, the longitudinal electromagnetic (EM) field is very small in magnitude as compared to the transverse field [10,12].…”

“…In this paper, a distributed model is proposed [12]. It includes the effect of wave propagation along the electrodes more accurately than the semi distributed model although the CPU time of this model is a little greater than the slice model.…”

Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors

“…In this chapter, a new distributed FET model is proposed. In this model [7]- [8], each infinitely unit segment of the device electrodes was divided into two parts namely, active and passive. The passive part describes the behavior of the transistor as a set of three coupled transmission lines while the active part that can be modeled by an electrical equivalent distributed circuit whose elements are all per-unit length.…”