Cadmium telluride thin-film solar cells by pulsed-laser deposition

Compaan, A.; Tabory, C.N.; Shao, Mingwang; Li, Y.; Fischer, A.; Feng, Z.; Bohn, R. G.

doi:10.1063/1.44919

Cited by 4 publications

(5 citation statements)

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“…Particularly, the PLD method permits to control and change the CdS/CdTe layer intermixing, as well as layer structure and grain size [9,10]. Compaan et al [11,12] fabricated polycrystalline CdS/CdTe solar cells on glass substrates by PLD method. The studies show that properly preparing of targets in this method leads to CdTe/CdS mixed interfaces as well as to doping of the structure in a simple way.…”

Section: Introductionmentioning

confidence: 99%

Layers of CdTe and CdS obtained by PLD on ITO substrates

et al. 2006

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Section: Introductionmentioning

confidence: 99%

Layers of CdTe and CdS obtained by PLD on ITO substrates

et al. 2006

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“…However, the reports are mainly focused on physical properties of the films as evaluated by scanning electron microscopy, atomic force microscopy, UV-Vis and X-ray diffraction [24,25]. PLD-based solar cells with efficiencies from 3% to 10.5% have also been reported [16][17][18][19][20][21]. In this paper, in-situ deposited CdTe/CdS films are analyzed with a special emphasis on their electrical properties using current-voltage…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…[3,14,18,21]. To complete the devices, 200 nm of gold on 3 nm of copper contacts [16] were deposited by e-beam deposition and an annealing process at 150C in a N 2 atmosphere for 30 minutes was carried out after contact deposition. The resulting devices were analyzed electrically studied using I-V and C-V measurements.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Most thin film CdTe heterojunctions (< 5 m) are formed with CdS as the window layer in solar cells [1,3,4,[13][14][15][16][17][18][19][20][21]. So far, most CdTe/CdS reports are focused on evaluating the impact of this material on solar cells performance as function of CdTe deposition parameters such as substrate temperature, deposition pressure, post deposition treatments as well as metal contacts.…”

Section: Introductionmentioning

confidence: 99%

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In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition

et al. 2016

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In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 10 5 , an ideality factor < 2, and a reverse saturation current ~10-8 A. The carrier concentration in the CdTe film was in the range of ~10 15 cm-3 , as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

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“…CdS films can be deposited by a wide range of techniques, such as vacuum evaporation [4], atomic layer epitaxy [5], spray pyrolysis [6], close space sublimation [7], radio frequency sputtering and LASER physical vapour deposition [8], chemical bath deposition [9], electrochemical deposition [10], etc. Recently, the galvanic technique (a second electrochemical process) has been used by us to deposit CdS thin films [11,12].…”

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confidence: 99%

A cleaner approach towards deposition of CdS thin films by an electrochemical technique

Mondal

Madhu

Bandyopadhyay

2008

Phys. Status Solidi (c)

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CdS thin films have been deposited on Transparent Conducting Oxide (TCO, containing SnO2: F) coated glass substrates from aqueous sodium thiosulfate solutions, using the galvanic technique. A cadmium foil was used as a sacrificial anode and was the only source of Cd++ ions for CdS thin films, no external bias being used during film depositions. The films have been characterized using X‐ray diffraction, SEM, EDX, AFM and optical absorption studies. AAS analyses were carried out to determine the Cd content in solutions after film deposition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cadmium telluride thin-film solar cells by pulsed-laser deposition

Cited by 4 publications

References 0 publications

Layers of CdTe and CdS obtained by PLD on ITO substrates

Layers of CdTe and CdS obtained by PLD on ITO substrates

In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition

A cleaner approach towards deposition of CdS thin films by an electrochemical technique

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