Cadmium tellutide etched surfaces

Konova, A.; Shopov, A.; Nedev, I.

doi:10.1016/0040-6090(86)90262-2

Cited by 6 publications

(2 citation statements)

References 21 publications

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“…In both these works the surface was studied using the Rutherford backscattering method. It is worth mentioning that no changes in the surface stoichiometry as compared with the bulk value were found by Dharmadaza et al [11], and Konova et al [12] observed a dependence of the surface stoichiometry on the conduction type.…”

Section: Introductionmentioning

confidence: 87%

Study of CdTe etching process in alcoholic solutions of bromine

Kotina

Tukhkonen

Patsekina

et al. 1998

Semicond. Sci. Technol.

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Changes in the structure and stoichiometry of the p-CdTe surface as a result of etching have been studied by high-resolution x-ray photoelectron spectroscopy and the Rutherford backscattering method. Etching with bromine-methanol and bromine-butanol solutions is shown to enrich the surface with elementary tellurium (Te 0 ). The etching process is anisotropic, in particular, the extent of enrichment with Te 0 is not the same for A and B surfaces. Arguments are developed in favour of the heterophase nature of the etched surface. The presence of water in the etches leads to Te 0 oxidation in the course of etching. The mechanism of etching is discussed based on the data obtained.

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Section: Introductionmentioning

confidence: 87%

Study of CdTe etching process in alcoholic solutions of bromine

Kotina

Tukhkonen

Patsekina

et al. 1998

Semicond. Sci. Technol.

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“…In addition, dry etching is compatible with a closed system approach to growth, processing, and analysis of semiconductor materials and devices. The use of vapor phase etching techniques for II-VI semiconductors such as CdTe and HgCdTe is particularly desirable because of the sensitivity of these materials to the surface damage and compositional variation that can result from the wet etching process [1]. We have found that a detailed understanding of the reactions which occur during the interaction of the vapor phase reactants and the semiconductor surface is essential to the development and optimization of a dry etching procedure for these materials.…”

Section: Introductionmentioning

confidence: 99%

The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces

et al. 1989

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AbstactThe mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals generated by the laser photodissociation of acetone at 193 nm efficiently etch both Te and Te-rich CdTe surfaces. However, there is no evidence for reaction of methyl radicals with Cd or stoichiometric CdTe. A temperature dependence in the rate of methyl radical etching of Te-rich CdTe is related to a competition between acetone scavanging of radicals on the surface and reaction of radicals to form volatile metalorganics. Acetone itself has a small but finite reaction probability with Te and Te-rich CdTe surfaces.

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Band alignment of CdTe with MoOx oxide and fabrication of high efficiency CdTe solar cells

Wang

Yang

et al. 2018

Solar Energy

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Cadmium tellutide etched surfaces

Cited by 6 publications

References 21 publications

Study of CdTe etching process in alcoholic solutions of bromine

Study of CdTe etching process in alcoholic solutions of bromine

The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces

Band alignment of CdTe with MoOx oxide and fabrication of high efficiency CdTe solar cells

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