Caesium‐ion‐induced Auger emission from aluminium and silicon

Abstract

Cs+-induced Auger emission from aluminium and silicon is reported. The atomic-like features in the spectra are identified and compared with data reported by others for bombardment with noble gas ions. Ion-induced Auger spectra for aluminium and silicon, measured during the sputter-etching of an afuminium-on-silicon structure, are used to generate dynamic Auger depth profiles for this structure. The ion-induced Auger profile correlates with an AICs+ secondary ion enhancement observed in the Cs+-ion dynamic SIMS depth profile, approaching the AI/Si interface. This AICs+ enhancement parallels a Sics+ secondary ion enhancement in the early stages of depth profiling of a fresh silicon surface with a Cs+ ion beam.

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“…This peak, identified as a Si 0 Auger line, disappeared for samples having SiO 2 layers thicker than 7 nm. Literature analysis indicated that in this energy range, there were two Si 0 Auger lines, one was located at 89.6 eV and another positioned at 87.7 eV, where it overlapped with Au 4f 5/2 . , These two peaks were also observed in the same E b region for bare SiO 2 /Si wafers, with their intensity decreasing with an increase in thickness of SiO 2 layers. Therefore, a combination of these experimental observations confirms the Auger origin of the observed peaks (Supporting Information, Figure S5).…”