Calcium ladder cuprate films grown by Molecular Beam Epitaxy

Cavellin, C. Deville; Eustache, B.; Hatterer, C.; Lauriat, J.P.; Xu, Xiang; Mairet, V.; Beuran, F. C.

doi:10.1016/s0921-4534(97)00566-2

Cited by 4 publications

(2 citation statements)

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“…C 60 is a particularly interesting superconductor because the dominant electron-phonon interaction, being an on-site intramolecular property, can be conceptually separated from the electronic density of states, which is given by the distance between adjacent molecules. Expanding the lattice, therefore, increases the density of states, and the resulting increase of T c is well documented in alkali metal-doped bulk samples (A 3 C 60 ) (12,13). The observation of gate-induced hole doping of C 60 resulting in a T c of 52 K suggests that significantly higher T c 's could be anticipated in suitably "expanded" C 60 crystals.…”

Section: For Correlation Analyses Of Subsets Of Object-selectivementioning

confidence: 94%

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Field-Induced Superconductivity in a Spin-Ladder Cuprate

Schön

Dorget

Beuran

et al. 2001

Science

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We report on the modulation of the transport properties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using the field effect in a gated structure. At high hole-doping levels, superconductivity is induced in the nominally insulating ladder material without the use of high-pressure or chemical substitution. The observation of superconductivity is in agreement with the theoretical prediction that holes doped into spin ladders could pair and possibly superconduct.

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Section: For Correlation Analyses Of Subsets Of Object-selectivementioning

confidence: 94%

“…The film, 30 nm thick, was grown by MBE on a MgO (100) substrate (13). The crystal structure and composition were determined, using four-circle x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering.…”

Section: For Correlation Analyses Of Subsets Of Object-selectivementioning

confidence: 99%

Field-Induced Superconductivity in a Spin-Ladder Cuprate

Schön

Dorget

Beuran

et al. 2001

Science

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Molecular beam epitaxial growth of SrCu2O3: Metastable structures and the role of epitaxy

Ingle

Hammond

Beasley

2002

Journal of Applied Physics

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Within the study of oxide materials, high pressure bulk growth has generated a number of new and interesting materials. More recently, attention has been paid to using epitaxy to stabilize these high pressure oxide materials as thin films. In this article we report on the molecular beam epitaxial growth of SrCu 2 O 3 ; a high pressure, highly correlated, model oxide. We find that the choice of substrate can significantly alter not only the structure but also the chemistry of the resulting film. For growth on SrTiO 3 substrates the epitaxially stabilized structure for single phase films with a SrCu 2 O 3 composition is based on a tetragonal unit cell. For identical growth conditions, but on a LaAlO 3 substrate, a single phase film with the composition and structure of the infinite layer material (SrCuO 2 ) is formed. We also review the literature for the successes and failures of epitaxy to stabilize high pressure structures.

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Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4

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Raquet²,

Rakoto³

et al. 2003

Journal of Applied Physics

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Low-temperature charge transport in [Ca1+δCu2O3]4 films with δ=0 and 0.08 is investigated at T=1.4–290 K in magnetic fields of B=0–30 T. Between Tv≈20 and 40 K, depending on δ, and Tv′≈2–3 K three-dimensional (3D) Mott variable-range hopping (VRH) conductivity is observed. Deviations from 3D Mott VRH conductivity below Tv′ can be attributed to the onset of the Shklovskii–Efros VRH regime, accompanied by violation of the 3D hopping condition, Rh≪d (where Rh is the mean hopping length and d is the thickness of the film). The density of the localized states (DOS) at the Fermi level, g3(μ)≈4.4×1020 eV−1 cm−3, the values of the localization radius, α≈46 and 34 Å, the concentration of sites involved in hopping charge transfer, N≈9.9×1018 and 9.0×1018 cm−3, the width of the band of localized electron states, 2W≈22 and 20 meV, and the width of the Coulomb gap in the DOS spectrum, 2Δ≈1 and 1.6 meV are obtained for films with δ=0 and 0.08, respectively. These values characterize the films as being near the 3D metal–insulator transition given by the critical concentration NC≈1.3×1019 cm−3.

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Calcium ladder cuprate films grown by Molecular Beam Epitaxy

Cited by 4 publications

References 1 publication

Field-Induced Superconductivity in a Spin-Ladder Cuprate

Field-Induced Superconductivity in a Spin-Ladder Cuprate

Molecular beam epitaxial growth of SrCu2O3: Metastable structures and the role of epitaxy

Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4

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