Calculating development parameters for chemically amplified resists by the film-reducing method

Sekiguchi, Atsushi; Sensu, Yoshihisa

doi:10.1117/12.2008791

Cited by 6 publications

(1 citation statement)

References 6 publications

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“…These parameters include development parameters [1] , Dill's C parameter [2][3] , the diffusion length of PAG-derived acids [4] , and parameters for deprotection reactions [5][6] . Through EUV resist simulations based on these parameters, we have examined various conditions for reducing LER and improving resolution [7][8] .…”

Section: Introductionmentioning

confidence: 99%

The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method

Sekiguchi

Ohta

Harada

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

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Our previous studies focused on ways to measure simulation parameters for EUV resists, including development parameters, Dill's C parameter, the diffusion length of PAG-derived acids, and parameters for deprotection reactions. Through EUV resist simulations based on these parameters, we examined conditions for reducing LER and improving resolution. This paper presents the results of our investigations of methods for determining the refractive index n and extinction coefficient k of photoresists for EUV light (wavelength 13.5 nm), parameters generally considered difficult to measure, and for calculating an absorption parameter known as the Dill's B parameter. We investigated three types of photoresists: polymer decomposition type resist, chemically amplified resist, and EUV metal resist.

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Section: Introductionmentioning

confidence: 99%

The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method

Sekiguchi

Ohta

Harada

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

View full text Add to dashboard Cite

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Study of i-Line Photosensitive Materials with a Wide Depth of Focus for Fine Pitch Redistribution Layers

Yukimori

Kunito

Ishikawa

et al. 2021

2021 IEEE 71st Electronic Components and Technology Conference (ECTC)

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Surface property control for 193 nm immersion resist by addition of Si compound

Tang

Sekiguchi

Ohta

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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In ArF immersion lithography, the presence of immersion liquid between the resist surface and the lens causes problems, such as the leaching of the photoacid generator into the liquid and the presence of residual liquid on the resist surface, which can result in watermarks and other defects. One method to address such issues is adding an F-based compound with low dry-etch resistance to the resist. In the present study, we developed a novel resist for ArF immersion exposure that replaces the F compound with an Si (dimethylpolysiloxane)-based additive to enhance dry-etch resistance. We experimentally evaluated contact angles with respect to water and developer solution, depth concentration of the additives (segregation), agent dissolution (leaching), dry-etch resistance, and spectral transmittance of the comparative resists. Simulation studies were performed to evaluate pattern profiles. The developed resist with the Si-based additive showed improved properties compared with that with the F-based additive.

show abstract

Calculating development parameters for chemically amplified resists by the film-reducing method

Cited by 6 publications

References 6 publications

The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method

The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method

Study of i-Line Photosensitive Materials with a Wide Depth of Focus for Fine Pitch Redistribution Layers

Surface property control for 193 nm immersion resist by addition of Si compound

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