We are now beginning to see the application of extreme ultraviolet (EUV) lithography to the mass production of 7 nm node logic devices, primarily for smartphones. This lithography technology currently attracts the most interests due to its expected use in upcoming mass production of 5nm node and beyond for semiconductor devices. The development of EUV resists are one of the key research areas. However, EUV exposure instruments are extremely costly, and there are currently no tools that can be used for resist development. To promote the development of EUV resists, we investigated an evaluation method based on EB exposure for EUV resist. Due to similar exposure reaction mechanisms to EUV exposure, EB exposure offers a practical alternative. This paper examines the use of EB exposure simulations to advance EUV resist development.

No abstract

No abstract

In this paper, we report MIM capacitor with atomic layer deposition (ALD) grown SiN film integrated in 0.18 µm five-level Al-metallization technology. Due to large thermal budget of dielectric film deposition in ALD-SiN MIM capacitor fabrication, hillock suppression on lower electrode is investigated. Capacitor shows negligible frequency dispersion and quadratic voltage coefficients of capacitance less than 60 ppm/V 2 with capacitance density greater than 3 fF/µm 2 were achieved.

No abstract