Calculation and analysis of distributions of current density and temperature over the area of the the InGaN/GaN structure of high-power light-emitting diodes

Nonlinear thermal model of a heterojunction-based light-emitting diode

“…The geometric sizes and physical characteristics of the elements of the InGaN/GaN structure under esti mation on the sapphire substrate were reported in [4]. The numerical-analytical method for solving the set of simulation equations under consideration is pre sented, if the value η = 0.…”

“…In order to perform theoretical studies and analyze the above mentioned effects in development of the previously suggested model [4], we considered a ther moelectric model for an In-GaN/GaN heterojunc tion structure on a sapphire substrate, arranged on a metal heat sink (Fig. 1).…”