Calculation of energy spectra of electrons transmitted through thin aluminium foils

Reimer, Ludwig; Senkel, R.

doi:10.1088/0022-3727/25/9/016

Cited by 5 publications

(3 citation statements)

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“…The EELS spectra and the angular distribution of inelastically scattered electrons have to be taken into account for the exact calculation of the influence of multiple scattering and straggling on energy spectra that resolve plasmon losses in the case of reflected or transmitted electrons (e.g.. Reimer 1989. Reimer and Senkel 1992, Shimizu and Ichimura 1984.…”

Section: Stopping Powermentioning

confidence: 99%

“…The introduction of field-emission or Schottky emission guns has overcome the former difficulties with thermionic electron guns in getting sufficient electron-probe currents and small probe sizes at low-electron energies. The decrease of the electron range and the damaged surface layer, the charge neutralization on somewhat rough insulating surfaces, and the increased secondary electron yield when decreasing the electron energy are the main reasons for the increasing interest in low-voltage scanning electron microscopy (LVSEM) with electron energies E = 0.1-5 keV (Joy 1985(Joy ,1991Pawley 1984Pawley ,1990Pawley ,1992Reimer 1992Reimer ,1993.…”

Section: Introductionmentioning

confidence: 99%

“…In the case of aluminium, d d d w can be modeled analytically by formulae for the plasmon excitation, Compton scattering (Bethe ridge) and L-and K-shell ionization. This has been used in a calculation and comparison with experiments about the energyloss spectrum of 20-40 keV electrons transmitted through thick aluminium films (Reimer and Senkel 1992) but it also can be used for the Monte Carlo simulation of backscattering as shown in Figure 13. In the case of other elements the function dddw Eq.…”

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confidence: 99%

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Electron‐specimen interactions in low‐voltage scanning electron microscopy

et al. 1993

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Measurements of the electron range R, and the backscattering coefficient η and the secondary electron yield δ at normal and tilted incidence for different elements show characteristic differences for electron energies in the range of 0.5 to 5 keV, compared with energies larger than 5 keV. The backscattering coefficient does not increase monotonically with increasing atomic number; for example, the secondary electron yield shows a lesser increase with increasing tilt angle. This can be confirmed in back‐scattered electron (BSE) and secondary electron (SE) micrographs of test specimens. The results are in rather good agreement with Monte Carlo simulations using elastic Mott cross‐sections and a continuous‐slowing‐down model with a Rao Sahib‐Wittry approach for the stopping power at low electron energies. Therefore, this method can be used to calculate quantities of BSE and SE emission, which need a larger experimental effort. Calculations of the angular distribution of BSEs show an increasing intensity with increasing atomic number at high takeoff angles than expected from a cosine law that describes the angular characteristics at high electron energies. When simulating the energy distribution of BSEs, the continuous‐slowing‐down model should be substituted by using an electron energy‐loss spectrum (EELS) that considers plasmon losses and inner‐shell ionizations individually (single‐scattering‐function model). The EELS can be approached via the theory for aluminium or from EELS spectra recorded in a transmission electron microscope for other elements. Measurements of electron range Rα En of 1 to 10 keV electrons are obtained from transmission experiments with thin films of known mass thickness. In agreement with other authors the exponent n is lower than at higher electron energies.

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Section: Stopping Powermentioning

confidence: 99%