Calculation of Ge_1-xY_x (Sn, Pb) work function along (100), (110), (111) directions based on first principle

Abstract

Ge Schottky diode is the core component of the rectifier circuit in wireless power transfer. By reducing its series resistance, the rectification efficiency of the wireless power transfer can be improved. Ge can be made into a direct band gap semiconductor by alloying with 8% Sn component or 3% Pb component. The electron mobility of direct band gap Ge 1-x Y x (Sn, Pb) alloy is two to three times that of Ge. High electron mobility will reduce the series resistance of a Schottky diode. Therefore, in recent years, direct band-gap Ge 1-x Y x (Sn, Pb) alloys for Schottky diodes have attracted much more attention. Using a direct band gap Ge 1-x Y x (Sn, Pb) alloy to make a Schottky diode requires designing a Schottky junction first. To this end, the first-principle method is used to calculate Ge 1-x Y x (Sn, Pb) alloys along different directions, which provides a theoretical basis for the subsequent Schottky junction design.

A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology

“…称为SBD的反向饱和电流. 若考虑镜像力和隧道 效应对势垒高度的影响, 则 向最高电子迁移率相比至少可提升二倍 [15−17] , 不 仅解决了选用 晶向高电子电导率有效质量致 半导体电子迁移率下降的问题, 还有效地降低了 SBD的串联电阻, 提升了器件的整流效率 [18] .…”