The chemical bonding and band edge line-up of several gate insulators on monoclinic (M1) phase VO 2 are studied based on hybrid density functional calculations. High dielectric constant HfO 2 and ZrO 2 , wide band gap oxide Al 2 O 3 , and narrower band gap TiO 2 are considered. The insulating interface supercells with a clean bandgap are built and adapted to analysis the band alignment. All the gate insulators show the type-I band alignment with VO 2. The valence band offset are all larger than 1 eV. The calculated conduction band offsets for HfO 2 , ZrO 2 and Al 2 O 3 are all larger than 2 eV. In terms of the band alignment, these three insulators can work as suitable gate dielectrics for VO 2-based device application, but more accurate line-up analysis on TiO 2 /VO 2 interface is still needed.