Calculation of Three-Dimensional Passive Structures Including Bond-Wires, Via-Holes and Air-Bridges using the Spectral Domain Analysis Method

Becks, T.; Wolff, I.

doi:10.1109/euma.1991.336363

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…The signal can therefore be routed to different output ports with one switch at the open state and the other at the close state. Bond wires are applied to electrically connect the different ground conductors to suppress the excitation of the parasitic, coupled slot-line mode in laterally asymmetrical geometries, especially in a high-frequency range [24].…”

Section: The Single-pole Double-throw (Spdt) Switching Circuitmentioning

confidence: 99%

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

Tang

Liu

Oberhammer

2008

J. Micromech. Microeng.

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This paper presents a novel low-loss single-pole-double-throw (SPDT) switching circuit which integrates a silicon-core metal-coated coplanar waveguide (CPW) and two laterally moving switches in parallel. The circuit structure consists of single-crystal silicon as the core material and a thin layer of metal coated on the core surface to propagate the RF signal. The influences of the material property and the process variation on the RF performance of the silicon-core metal-coated CPW is analyzed in detail, including the silicon-core resistivity, the spreading metal on the substrate and the recess etching depth. Based on this analysis, the low-loss SPDT switching circuit is designed and fabricated using high-resistivity silicon (HRSi) as the core material and Pyrex 7740 glass as the substrate. The pull-in voltage of the laterally moving switch is 12.35 V. The insertion loss of the laterally moving switch is less than 1 dB up to 40 GHz. Both the return loss and the isolation are higher than 22 dB up to 40 GHz. The SPDT switching circuit has an insertion loss of less than 1 dB up to 22 GHz. The return loss is 17 dB and the isolation is 25 dB at 25 GHz. A silicon-on-glass (SOG)-based substrate-transfer micromachining process is developed for the SPDT switching circuit fabrication, which has the advantages of single mask, high design flexibility and low signal propagation losses.

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Section: The Single-pole Double-throw (Spdt) Switching Circuitmentioning

confidence: 99%

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

Tang

Liu

Oberhammer

2008

J. Micromech. Microeng.

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“…An analysis of lumped elements using simple models is.often not accurate enough for the narrow band filter applications. On the other side, a full wave analysis [3][4] of the whole filter (or even every lumped element involved) is a time and memory storage consuming technique and gives no information about the influence of various elements of the filter. An alternative offers the segmentation method, but in this technique, some effects such as the influence of the air-bridges and connected transmission lines on ports as well as the interaction between the segmented parts are not taken into account.…”

Section: Introductionmentioning

confidence: 99%

Field theoretical broadband modeling of coplanar lumped elements and their application in (M)MIC bandpass filters

Naghed

Hopf

Wolff

1996

26th European Microwave Conference, 1996

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Broadband modeling of coplanar lumped elements based on 3-D quasistatic Finite-Difference field calculations are presented. Model parameters are derived from the calculated electric and magnetic field components. Coplanar bandpass filters are designed and realized on ceramic and GaAs substrates. The characteristics of the filters are calculated using the broadband models of the lumped elements involved. The results are compared with measurements showing good agreement.

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“…In [6] a completely different method to calculate S-parameters of 3d coplanar type circuits has been introduced. This different method is a very efficient one for coplanar structures but is not able to handle microstrip structures.…”

Section: Theorymentioning

confidence: 99%

Full-wave analysis of 3D metallization structures using a spectral domain technique

Becks

Wolff

1992 IEEE Microwave Symposium Digest MTT-S

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A full-wave method for the investigation of microstrip-and coplanar-structures including 3d metallization structures is presented. Spectral domain analysis method is used to calculate the Sparameters of unshielded microwave components containing bond-wires and air-bridges. The general formulation and the procedure of the method are described. The application of the theory is given by a comparison of measured and calculated results for a spiral inductor.

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Calculation of Three-Dimensional Passive Structures Including Bond-Wires, Via-Holes and Air-Bridges using the Spectral Domain Analysis Method

Cited by 9 publications

References 11 publications

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

Field theoretical broadband modeling of coplanar lumped elements and their application in (M)MIC bandpass filters

Full-wave analysis of 3D metallization structures using a spectral domain technique

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