Thin-film electrets have been patterned with trapped charge with submicrometer resolution using a flexible, electrically conductive electrode. A poly(dimethylsiloxane) stamp, patterned in bas-relief and supporting an 80-nanometer-thick gold film, is brought into contact with an 80-nanometer-thick film of poly(methylmethacrylate) supported on n-doped silicon. A voltage pulse between the gold film and the silicon transfers charge at the contact areas between the gold and the polymer electret. Areas as large as 1 square centimeter were patterned with trapped charges at a resolution better than 150 nanometers in less than 20 seconds. This process provides a new method for patterning; it suggests possible methods for high-density, charge-based data storage and for high-resolution charge-based printing.Electrets are materials than can retain trapped electrical charge or polarization (1). Patterns of charge are used in photocopiers (xerography) to develop images with 100 m resolution (2). Systems that write and read patterns of charge have been explored extensively, because of their potential in rewritable digital data storage (3-5). Current procedures based on scanning probes achieve a writing rate of 100 kbits/s at an areal density of 7 Gbits/cm 2 (120 nm bit size), and achieve a resolution of 100 nm (6,7). Although this density is about 140 times the areal density of optical compact discs, the writing rate is slow: patterning an area of 1 cm 2 requires 24 hours. Here, we describe a method that uses a flexible, micropatterned electrode to pattern an electret thin film in a parallel process by injecting and trapping charges over areas of ϳ1 cm 2 ; we call this method electrical microcontact printing (e-CP). Because the electrode is flexible, it can make sufficiently intimate electrical contact with a solid surface to produce uniform pattern transfer by charging. The resulting patterns were imaged using Kelvin probe force microscopy (KFM) (8). We have used e-CP to pattern surfaces (Ͼ1 cm 2 ) with features ranging from 120 nm to 100 m in size in less than 20 s; this combination of area feature size, and writing time corresponds to an increase of Ͼ10 3 in writing speed compared to that obtained by a single tip in serial scanning probe methods. Figure 1 illustrates the procedure. The stamp was poly(dimethylsiloxane) (PDMS), patterned in bas-relief using procedures described in (9); it was ϳ5 mm thick and supported on a glass slide. The patterned surface of the PDMS stamp was made electrically conducting by thermal evaporation of 7 nm of Cr (as an adhesion promoter) and 80 nm of Au onto it (10). Poly(methylmethacrylate) (PMMA, an 80-nm film on a Ͻ100Ͼ n-doped Si wafer with a resistivity of 3 ohm⅐cm) was the charge storage medium; PMMA is commercially available and is an electret with good charge storage capabilities (11). The wafer was cut into 1-cm 2 squares. To generate a pattern of trapped charge, we placed the metal-coated PDMS stamp on top of the PMMA film (without added pressure) and applied a voltage of 10 to 20 V b...