plasmonic metals, such as Au and Ag, that are not CMOS compatible. [8] Here, we report an all-electrical, CMOS-compatible electronic-plasmonic transducer based on an Al-AlO X -Cu tunnel junction as the plasmon source, a Si-Cu Schottky diode as the plasmon detector, both connected by a Cu plasmonic strip waveguide. These electronic-plasmonic transducers do not require bulky off-chip components and are useful for future on-chip applications where it is vital to interface plasmonics with microelectronics. [1,9] Often, SPPs are excited by optical means, which requires momentummatching elements such as gratings or prisms. [10] One approach to realize on-chip excitation of SPPs is to miniaturize the light sources where first an electrical signal is converted to photons which then couple to SPPs. [3,11,12] In this context of miniaturization, metalinsulator-metal tunnel junctions (MIM-TJs) are interesting because they can be used as electrically driven plasmon sources where SPPs are directly excited via inelastic tunneling of electrons. [13][14][15] The potential of such plasmonic tunnel junctions has been explored in terms of two-photon emission, [16] above threshold emission (where the emitted photons have higher energy than the applied bias), [17,18] and nonlinear effects [19] have been demonstrated. It is also possible To develop methods to generate, manipulate, and detect plasmonic signals by electrical means with complementary metal-oxide-semiconductor (CMOS)-compatible materials is essential to realize on-chip electronicplasmonic transduction. Here, electrically driven, CMOS-compatible electronic-plasmonic transducers with Al-AlO X -Cu tunnel junctions as the excitation source of surface plasmon polaritons (SPPs) and Si-Cu Schottky diodes as the detector of SPPs, connected via plasmonic strip waveguides of Cu, are demonstrated. Remarkably, the electronic-plasmonic transducers exhibit overall transduction efficiency of 1.85 ± 0.03%, five times higher than previously reported transducers with two tunnel junctions (metal-insulatormetal (MIM)-MIM transducers) where SPPs are detected based on optical rectification. The result establishes a new platform to convert electronic signals to plasmonic signals via electrical means, paving the way toward CMOS-compatible plasmonic components.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smll.202105684.