“…Adhesion or fracture strength reduction of the release film can be obtained by H þ implantation, 10 by using a porous material, 11 by metal oxidation, 12 by using Self Assembled Monolayers (SAMs), 13 fluorinated polymer films 14 or by UV exposure. 1 Likewise, pattern adhesion on the target wafer can be promoted by using other types of SAM, 15 by plasma 9 or UV exposure, by using reactive metals, sealing materials or by thermal way (furnace annealing or laser heating). 5 The interest of using film transfer technology to enable the fabrication and integration of full films, micro=nano devices or microelectromechanical systems (MEMS) from incompatible technologies has been demonstrated through several works such as, GaAs optoelectronics devices (Laser Diode, Wave Guide and Photo Diode GaAs Optical Link) with standard VLSI technology, 16 CMOS com-patible fabrication of bolometers 17 or monocrystalline silicon mirrors, 6 transfer of silicon onto InP or MgO substrates, 4 InP=InGaAsP dies on silicon-on-insulator waveguide circuits, 18 etc.…”