Cap thickness effects on Al/sub 0.37/Ga/sub 0.63/As and GaAs diode solar cells

Ristow, L.M.; Kuryla, M. S.; Chung, B.‐C.; Partain, L. D.

doi:10.1109/16.477615

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…The p/n configuration instead of n/p structure was employed, because in the latter structure, low open-circuit voltages and fill factors could result due to nonlinear shunting. 5) The completed epitaxial wafer was purchased from Sumitomo Electric Industries Ltd.…”

Section: Device Fabrication and Measurementsmentioning

confidence: 99%

A GaAs Micro Solar Cell with Output Voltage over 20 V

Ohsawa

Kawasaki

Tanaka

et al. 1999

Jpn. J. Appl. Phys.

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Twenty-four micro-solar cells connected in series have been fabricated on semi-insulating (SI) GaAs substrates for application in the fields of micro-electromechanical systems. The array was formed in an area of 0.8 × 1.0 mm 2 , and exhibited an open-circuit voltage of 22.5 V under illumination of 5 mW at the wavelength of 815 nm. Calculation and experiment has demonstrated that, unlike conventional solar cells, the shunt resistance deteriorates the output characteristics far more seriously than the series resistance in the case of micro-solar cells. Leakage currents in both the unit diode and the substrate were evaluated separately. A quantitative estimate based on the measurements revealed that photocurrents generated in the surface of the SI substrate could function as a vital shunt resistance. Light-blocking metal films were successfully employed to obtain high output voltage.

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Section: Device Fabrication and Measurementsmentioning

confidence: 99%

A GaAs Micro Solar Cell with Output Voltage over 20 V

Ohsawa

Kawasaki

Tanaka

et al. 1999

Jpn. J. Appl. Phys.

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Perimeter Effects on Heavy Doping GaAs Diodes

Shi¹,

Wang²,

Guanqun³

1998

Chinese Phys. Lett.

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The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying. The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction. The AlGaAs layers enhance the dark current.

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Cap thickness effects on Al/sub 0.37/Ga/sub 0.63/As and GaAs diode solar cells

Cited by 2 publications

References 15 publications

A GaAs Micro Solar Cell with Output Voltage over 20 V

A GaAs Micro Solar Cell with Output Voltage over 20 V

Perimeter Effects on Heavy Doping GaAs Diodes

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