Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes

Kurakin, A. M.; Vitusevich, S. А.; Danylyuk, Serhiy; Наумов, А. В.; Foxon, C.T.; Новиков, С. В.; Klein, N.; Lüth, H.; Belyaev, A. E.

doi:10.1002/pssc.200565156

Cited by 12 publications

(6 citation statements)

References 8 publications

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“…The NDR disappeared after several runs just as observed previously and reported in [27]. In contrast to the I-V characterization of RTD, our capacitance measurements demonstrate reproducible characteristics in the MHz frequency range [28]. The small capacitance increase observed in the forward bias is confirmation of the influence of traps on the total capacitance of the structure.…”

supporting

confidence: 84%

AlGaN/GaN microwave transistors for wireless communication systems and advanced nanostructures for high-speed sensor applications

Vitusevich

2010

2010 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves

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I. Introduction. The AIGaN/GaN heterostructures are a relatively young class of materials, which have already found their way into many commercial applications and established themselves as key devices for the next generation of wireless communication systems [1]. GaN-based material systems possess fundamental properties that allow high-power operation in the millimeter-wave range. The piezoelectric effect is three times stronger in nitride-based materials than in GaAs, resulting in the formation of high sheet electron density (5xl0 1 3 cm-2 ) at the AIGaN/GaN interface without any intentional doping. To improve the high-frequency (HF) performance, transistor gate length and barr ier layer thickness should be decreased. However, this usually results in a decreasing density of the two-dimensional (2D) gas. One innovative approach for a high electron mobility transistor (HEMT) design was presented by M.Higashiwaki [2], who proposed the use of a thin and high-AI content barrier layer to keep sheet channel charge concentration high enough with a decreasing barrier layer thickness to reach high-power operation with a current-gain cutoff frequency of 152 GHz. Recently, novel processes for recessed 70-nm gate-length AIGaN/GaN HEMTs for gate-footprint definitions [3] were reported. The highest reported value today for any nitride transistor power-gain cutoff frequency is 300 GHz and it was achieved by combining a low-damage gate-recess technology and recessed source/drain ohmic contacts to enable minimum short channel effects and very low parasitic resistance [4]. However, material quality still limits the HF performance due to a lack of a suitable lattice-matched substrate. Therefore, epitaxial films contain a high density of dislocations. The substrates of choice are sapphire, silicon carbide and silicon. In spite of considerably improved thermal removing properties, the SiC substrate is still very expensive and Si substrates still demonstrate a comparatively high level of leakage currents. The latter results in decreasing output power densities from 12 W/mm (sapphire substrate) [5] to 5.1 W/mm (Si substrate) [6].One of most promising approaches for the fabrication of low-cost HEMTs involves the use of a sapphire substrate. The low-temperature (500° C) buffer layer of AIN proposed by Akasaki [7] serves to relax the strain between the GaN film and the sapphire, which in turn allows improving the surface morphology and crystalline quality of GaN epilayers. In spite of recent achievements, growth technology needs still to be improved in order to reduce the large concentration of structural defects with dislocation densities (DD) of the order of;:::; lO S + 10 10 cm-2 and to reduce significant residual deformations [8,9]. In addition, the limitation for CW power performance is the self-heating effect [10], which increases the knee voltage by (T/300K) LS for a definite channel temperature, T, of the HEMT. Recently, increasing interest has been shown to resonant tunneling diodes (RTD) [11,12], which represent the most promis...

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supporting

confidence: 84%

AlGaN/GaN microwave transistors for wireless communication systems and advanced nanostructures for high-speed sensor applications

Vitusevich

2010

2010 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves

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“…4, which also displays the theoretical capacitance values obtained using equation (3). In contrast to the initial reports of capacitance in III-Nitride RTDs [39], our devices exhibit repeatable current-voltage characteristics and also stable C-V behavior verified by dualsweep measurements. The capacitance of polar RTDs exhibits a monotonic decrease as the bias is swept from negative to positive values, consistent with the widening of the depletion region.…”

Section: Space-charge Effects On the Rtd Small-signal Impedancesupporting

confidence: 68%

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

et al. 2020

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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers, leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant tunneling voltage achieved via uniform doping, due to dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant tunneling devices.

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“…The RTD structures exhibit a resonance peak in the I-V characteristics at negative bias, but the peak current decreased in subsequent I-V measurements, and after several runs, the peak disappeared, as was previously registered in RTDs. 10 Important features were revealed after increasing the applied voltage to 6 V for 20 min ͓both positive ͑T + ͒ and negative ͑T − ͒ polarity͔ while maintaining the dissipated power in the order of 0.5-0.6 W. The sample demonstrates two stable states in the low-voltage I-V characteristics of the diode. Typical I-V characteristics for two registered stable states after the 6 V bias was applied are shown in Fig.…”

mentioning

confidence: 92%

Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures

Petrychuk

Belyaev

Kurakin³

et al. 2007

Applied Physics Letters

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This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN∕GaN heterostructures. Two stable states are registered in the I-V characteristics of the diodes. The temperature dependences of current and noise behavior are analyzed to understand the contribution of different mechanisms responsible for current formation in the structures. The evolution of the spectral density of the noise current with temperature reveals several recombination-generation components. The mechanisms responsible for the formation of current in AlN∕GaN∕AlN diodes are discussed taking into account the Poole-Frenkel effect.

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Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes

Cited by 12 publications

References 8 publications

AlGaN/GaN microwave transistors for wireless communication systems and advanced nanostructures for high-speed sensor applications

AlGaN/GaN microwave transistors for wireless communication systems and advanced nanostructures for high-speed sensor applications

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures

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