Capacitance–voltage characterization of fully silicided gated MOS capacitor

Abstract

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the threeelement and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO 2 /Si interface.

Advances͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ in͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ the͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ Applications͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ of͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ Organic͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ Materials͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ for͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ Fingerprint͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏͏ Detection

“…The excellent benefits of organic fluorescent materials in the aforementioned sectors haνe marked the beginning of a new direction of latent fingerprint display research.To obtain effectiνe and sensitiνe latent fingerprint νisualization, many researchers are deνoted to creating new organic fluorescent materials and combining them with established techniques (such as powder brush display, solution immersion method, glue post-fumigation staining method, etc.). Based on the chemical composition of fluorescent organic materials, including both fluorescent organic molecules and fluorescent polymers, the subsequent sections have been categorized into two groups, as outlined in references [13] and [14].…”

“…As a transporter, bio affinity enhancer, and fluorescence developer, the matrix utilized by fluorescent organic small molecules for LFP imaging is divided into two groups [13], [14]. Employing diverse methods, such as organic polymers, including conjugated oligomers, polymer dots, and various polymeric matrices, represents a novel category of materials for fluorescence imaging.…”

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

“…The industrial standard error is <4% for MOS capacitance extraction [4]. The three-element model and four-element model are not good enough for very thin di electric layer MOS capacitors because of frequency dispersion and roll-off (or upturn) [5][6][7][8][9][10][11][12]. As the thickness of di electric layer scales down, the impedances are comparable for dielectric layer and interface layer (IL).…”

Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO<inf>2</inf>/P-Si structure

“…These high-frequency capacitance-voltage (C-V) curves will be adjusted with the two-frequency four-element method to eliminate the frequency dispersion effect [3]. From Fig.1, we found that the flat band voltage (VFB) shifts to the lower value as the anneal temperature elevated.…”