Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots

Chiquito, A. J.; Pusep, Yu. A.; Mergulhão, S.; Galzerani, J. C.; Moshegov, N. T.

doi:10.1103/physrevb.61.5499

Cited by 52 publications

(35 citation statements)

References 16 publications

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“…The C-V data also revealed a thermal stability of the single-layer SADQs sample. Following our previous work 14 , the dispersion of the electron energy in the SAQDs (∆ε) were calculated from the C-V measurements. Both the calculated dispersion energies and the spectral widths of the PL lines decreased as the annealing temperature increased.…”

Section: Resultsmentioning

confidence: 99%

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

et al. 2004

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A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 °C in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 °C. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.

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Section: Resultsmentioning

confidence: 99%

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

et al. 2004

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“…They discussed considerably widespread peculiarities of C-V dependences of the Schottky structures with well-known shelf in such dependences connected with charge accumulation in QDs states [3][4][5][6] . A number of authors proposed some methods for the detail calculation of the capacitance and compared experimental and theoretical results [7][8][9] . At the same time all of them considered only cases when quantity of QDs states where charge accumulated was not enough to be comparable or even locally overcompensated the charge of main part of the spatial charge region (SCR).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Negative Differential Capacitance-Voltage Dependences of Shottky Diode Structures With Gaas/Inas QDS

Lin

Lee

Ilchenko

et al. 2014

SEMST

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Ñapacitance-voltage investigations were made on Schottky diodes with embedded GaAs/InAs quantum dots and quantum wells. An effect of the negative differential capacitance(NDC) was clear observed. Numerical modeling of the C-V dependences was carried out with temperature and concentration of QDs as parameters. Energy structure of the investigated samples was examined by deep level transient spectroscopy(DLTS). It was shown that the proposed model is in good agreement with experiment and describes well the NDC effect.

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“…However, PL provides little information on electron and hole levels relative to the barrier band edges. Space charge techniques such as capacitance-voltage spectroscopy (C -V) [2][3][4][5] and deep-level transient spectroscopy ͑DLTS͒ [6][7][8][9] allow absolute positioning of the QD levels, providing complementary information to PL. Carrier capture and escape dynamics of the dots can also be studied by means of DLTS.…”

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confidence: 99%

“…This method, already applied using a lever-arm relation for a single layer of dots in Ref. 4, facilitates the calculation for a multilayered system. Within this approach we obtain the best fit ͑solid line͒ to curve A of Fig.…”

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Tunneling carrier escape from InAs self-assembled quantum dots

Ibáñez

León

et al. 2001

Applied Physics Letters

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Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

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Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots

Cited by 52 publications

References 16 publications

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Investigation of Negative Differential Capacitance-Voltage Dependences of Shottky Diode Structures With Gaas/Inas QDS

Tunneling carrier escape from InAs self-assembled quantum dots

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