Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array

Wang, Wen Chuang; Tian, Yong Tao; Li, Kun; Lu, Eryang; Gong, Dong; Li, Xin Jian

doi:10.1016/j.apsusc.2013.02.045

Cited by 48 publications

(20 citation statements)

References 24 publications

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“…To explain the humidity-dependent capacitive characteristics of CMFTO electro-ceramics, the device sensitivity ( S ) has been calculated by using Equation (5) [55]:

S = \frac{C_{R H} - C_{33}}{C_{33}} \times 100 %

where C 33 and C RH stands for the capacitances measured at 33% RH and at a certain RH level, respectively. Figure 7 shows that the applied test frequency has a high influence on the sensitivity of humidity sensors.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, to overcome this nonlinearity drawback, an exponential function can be introduced to make the nonlinear response more linear [55]. Therefore, in the present study, a transformed logarithmic capacitive-RH response curve was generated and is depicted in Figure 9.…”

Section: Resultsmentioning

confidence: 99%

“…High hysteresis values have long been a major drawback in practical humidity sensor applications. The maximum hysteresis rate ( E max ) of our developed sensor has been calculated by using Equation (6) [55]:

E_{m a x} = \frac{Δ m}{Y_{F S}} \times 100 %

where, Δ m stands for the maximum hysteresis and Y FS is the full scale output.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Design and Development for Capacitive Humidity Sensor Applications of Lead-Free Ca,Mg,Fe,Ti-Oxides-Based Electro-Ceramics with Improved Sensing Properties via Physisorption

Tripathy

Pramanik

Manna

et al. 2016

Sensors

116

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Despite the many attractive potential uses of ceramic materials as humidity sensors, some unavoidable drawbacks, including toxicity, poor biocompatibility, long response and recovery times, low sensitivity and high hysteresis have stymied the use of these materials in advanced applications. Therefore, in present investigation, we developed a capacitive humidity sensor using lead-free Ca,Mg,Fe,Ti-Oxide (CMFTO)-based electro-ceramics with perovskite structures synthesized by solid-state step-sintering. This technique helps maintain the submicron size porous morphology of the developed lead-free CMFTO electro-ceramics while providing enhanced water physisorption behaviour. In comparison with conventional capacitive humidity sensors, the presented CMFTO-based humidity sensor shows a high sensitivity of up to 3000% compared to other materials, even at lower signal frequency. The best also shows a rapid response (14.5 s) and recovery (34.27 s), and very low hysteresis (3.2%) in a 33%–95% relative humidity range which are much lower values than those of existing conventional sensors. Therefore, CMFTO nano-electro-ceramics appear to be very promising materials for fabricating high-performance capacitive humidity sensors.

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“…To explain the humidity-dependent capacitive characteristics of CMFTO electro-ceramics, the device sensitivity ( S ) has been calculated by using Equation (5) [55]:

S = \frac{C_{R H} - C_{33}}{C_{33}} \times 100 %

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Design and Development for Capacitive Humidity Sensor Applications of Lead-Free Ca,Mg,Fe,Ti-Oxides-Based Electro-Ceramics with Improved Sensing Properties via Physisorption

Tripathy

Pramanik

Manna

et al. 2016

Sensors

116

View full text Add to dashboard Cite

show abstract

“…To evaluate the humidity dependent capacitive characteristic of the S1050 electroceramic and humidity dependent resistive characteristic of flexible S1050/PDMS nanocomposite film, the device sensitivity (S) is calculated using Equation (5) [55] and Equation (6) [56], respectively.

Sensitivity = \frac{{normalC}_{R H} - {normalC}_{33}}{{normalC}_{33}} \times 100 %

Sensitivity = \frac{Δ Z}{Δ % RH}

where C RH is the capacitance at any measured % RH condition and C 33 is capacitance value at the initial of RH is equal to 33%, Δ% RH is the difference in % RH and ΔZ is the difference in impedance or resistance.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterizations of Novel Ca-Mg-Ti-Fe-Oxides Based Ceramic Nanocrystals and Flexible Film of Polydimethylsiloxane Composite with Improved Mechanical and Dielectric Properties for Sensors

Tripathy

Pramanik

Manna

et al. 2016

Sensors

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Armalcolite, a rare ceramic mineral and normally found in the lunar earth, was synthesized by solid-state step-sintering. The in situ phase-changed novel ceramic nanocrystals of Ca-Mg-Ti-Fe based oxide (CMTFOx), their chemical reactions and bonding with polydimethylsiloxane (PDMS) were determined by X-ray diffraction, infrared spectroscopy, and microscopy. Water absorption of all the CMTFOx was high. The lower dielectric loss tangent value (0.155 at 1 MHz) was obtained for the ceramic sintered at 1050 °C (S1050) and it became lowest for the S1050/PDMS nanocomposite (0.002 at 1 MHz) film, which was made by spin coating at 3000 rpm. The excellent flexibility (static modulus ≈ 0.27 MPa and elongation > 90%), viscoelastic property (tanδ = E″/E′: 0.225) and glass transition temperature (Tg: −58.5 °C) were obtained for S1050/PDMS film. Parallel-plate capacitive and flexible resistive humidity sensors have been developed successfully. The best sensing performance of the present S1050 (3000%) and its flexible S1050/PDMS composite film (306%) based humidity sensors was found to be at 100 Hz, better than conventional materials.

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“…Samples 4, 5, and 6, (obtained at higher working pressures) have peaks at 34.4° (002 -wurzite phase), which are smaller and more extended than those obtained for samples 1, 2, and 3, indicating a more disorganized structure, and therefore, less crystalline. At low pressure, the particles produced a substrate with higher values of energy and can form zinc silicate (Zn 2 SiO 4 ) film in the interface, with peak at 25.3° (220) 14 . In addition to the influence of work pressure on the crystallinity of the film, the diffraction patterns also show the influence of the applied power on the film characteristics.…”

Section: Discussionmentioning

confidence: 99%

Evaluation of piezoresistivity properties of sputtered ZnO thin films

et al. 2014

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Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of -1610 ppm/K up to 250 °C.

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Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array

Cited by 48 publications

References 24 publications

Design and Development for Capacitive Humidity Sensor Applications of Lead-Free Ca,Mg,Fe,Ti-Oxides-Based Electro-Ceramics with Improved Sensing Properties via Physisorption

Design and Development for Capacitive Humidity Sensor Applications of Lead-Free Ca,Mg,Fe,Ti-Oxides-Based Electro-Ceramics with Improved Sensing Properties via Physisorption

Synthesis and Characterizations of Novel Ca-Mg-Ti-Fe-Oxides Based Ceramic Nanocrystals and Flexible Film of Polydimethylsiloxane Composite with Improved Mechanical and Dielectric Properties for Sensors

Evaluation of piezoresistivity properties of sputtered ZnO thin films

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