A patterned Ag structure was grown on a Si nanoporous pillar array (Si-NPA) by an immersion plating method, and its surface-enhanced Raman scattering (SERS) activity toward adenine was studied. It was shown that two kinds of Ag structures were grown on Si-NPA, a continuous film covering the Si-NPA substrate and composed of Ag nanocrystallites (nc-Ag), and a quasi-regular, interconnected network composed of loop-chains of sub-micron Ag crystallites surrounding the porous Si pillars. The SERS detection of low-concentration adenine solution was performed by using Ag/Si-NPA as active substrates, in which significantly enhanced Raman signals were observed. The SERS enhancement was attributed to the active spacing sites formed between the Ag particles and the nc-Ag which met the optimal size for causing a SERS effect. Based on the measured SERS spectra, the adsorption mode of adenine molecules on Ag particles was deduced. These results indicated that Ag/Si-NPA might be a promising active substrate for SERS detection of low-concentration bio-molecules.

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A GaN/Si nanoheterostructure array was prepared by growing GaN nanostructures on silicon nanoporous pillar array (Si-NPA). Based on as-grown and annealed GaN/Si-NPA, two light-emitting diodes (LEDs) were fabricated. It was found that after the annealing treatment, both the turn-on voltage and the leakage current density of the nanoheterostructure varied greatly, together with the electroluminescence (EL) changed from a yellow band to a near infrared band. The EL variation was attributed to the radiative transition being transformed from a defect-related recombination in GaN to an interfacial recombination of GaN/Si-NPA. Ours might have provided an effective approach for fabricating GaN/Si-based LEDs with different emission wavelengths.

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