Capacitive micromachined ultrasonic transducer with driving voltage over 100 V and vibration durability over 10&lt;sup&gt;11&lt;/sup&gt; cycles

Machida, Shinjiro; Kobayashi, Takashi; Degawa, Munenori; Takezaki, Taiichi; Tanaka, Hiroki; Migitaka, Sonoko; Hashiba, Kunio; Enomoto, H.; Nagata, Tatsuya; Yoshimura, Yasuhiro; Asafusa, K.; Ishida, Kazunari; Sano, S.; Izumi, Mikio

doi:10.1109/sensor.2009.5285588

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…A capacitive MUT (cMUT) uses electrostatic-driven surface micromachined membranes on Si substrates, and cMUTs have been widely studied because of their ease of manufacturing by the batch process and possibility of integrating signal processing circuitry. (5,6) The other is a piezoelectric MUT (pMUT), which is driven by piezoelectric materials such as lead zirconate titanate (PZT) film. (2−4) pMUTs have a lower operating voltage, higher transmission power, and higher sensitivity than cMUTs.…”

Section: Introductionmentioning

confidence: 99%

Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film

2015

Sensors and Materials

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To improve the transmitting and receiving characteristics of piezoelectric micromachined ultrasonic transducers (pMUTs), the thickness of the diaphragm material SiN x of the pMUT was investigated by vibration analysis using the finite element method (FEM). The vibration magnitudes increase 1.7-fold by changing the SiN x thickness from 1.0 to 0.5 μm as determined by the FEM results. A pMUT with a new structure that has a 0.5-μm-thick SiN x layer was fabricated and evaluated. The vibration of the pMUT was evaluated by a laser Doppler vibrometer (LDV), and the vibration magnitude of the fabricated pMUT was threefold that of our previously reported pMUT. Ultrasonic characteristics such as transmitted ultrasonic sound pressure and ultrasonic sensitivity are also evaluated and compared with those of the previous pMUT. The fabricated pMUT shows 11 times larger transmitted ultrasonic sound pressure and 5 times larger ultrasonic sensitivity than those exhibited by the previous pMUT.

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Section: Introductionmentioning

confidence: 99%

Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film

2015

Sensors and Materials

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“…Thanks to the progress in MEMS fabrication tools, electrostatic transducers with very thin vacuum gaps on the order of several tens of nanometers can now be micromachined more reliably [2].…”

Section: Introductionmentioning

confidence: 99%

Low drift in polysilicon-oxide micromachined ultrasonic transducers

Antoine

Bharatan

Tarvin

et al. 2011

2011 IEEE SENSORS Proceedings

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The trapping of charges in dielectric materials in micromachined membranes has impeded the development of commercially-viable Capacitive Micromachined Ultrasonic Transducers (CMUTs) fabricated through sacrificial release techniques. Unlike previous work focused on metal/silicon nitride material sets, this paper examines the possibility of engineering polysilicon and silicon dioxide to create stable and reliable emitters and receivers of ultrasonic waves for medical diagnostic and therapeutic tools, even after several years of operation. Less than 0.25% drift of zero-bias capacitance is observed after a one-year accelerated life test. This stability is more than 10 times better than past reports in the literature for conventional CMUTs.

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MEMS technology using back-end of line processes in CMOS LSI

Machida

2010

2010 IEEE International Interconnect Technology Conference

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Capacitive micromachined ultrasonic transducer with driving voltage over 100 V and vibration durability over 10<sup>11</sup> cycles

Cited by 6 publications

References 8 publications

Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film

Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film

Low drift in polysilicon-oxide micromachined ultrasonic transducers

MEMS technology using back-end of line processes in CMOS LSI

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