Capillary infiltration studies of liquids into 3D-stitched C–C preforms

Kumar, Suresh; Kumar, Anil; Shukla, Anupam; Gupta, Avi; Devi, Rohini

doi:10.1016/j.jeurceramsoc.2009.03.007

Cited by 37 publications

(28 citation statements)

References 10 publications

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“…For a long time, infiltration of Si and silicon rich alloys into porous carbon has been described as consisting of rapid, non-reactive, infiltration obeying Washburn's equation followed by the reaction between Si and C to form SiC [30][31][32]. Three experimental facts disagree with this model: (i) Infiltration of porous graphite by Si and NiSi alloys rich in silicon does not show a parabolic trend as predicted by Wasbhurn's equation, but is linear with time ( Figure 15) (ii) Si does not wet unreacted carbon substrates as shown by the large obtuse θ0 value in the curve of Figure 6.…”

Section: Wetting In Infiltrationmentioning

confidence: 99%

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Eustathopoulos

2015

Metals

133

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Abstract:The wettability of ceramics by liquid metals is discussed from both the fundamental point of view and the point of view of applications. The role of interfacial reactions (simple dissolution of the solid in the liquid or formation of a layer of a new compound) is illustrated and analysed. Several results are presented in order to illustrate the role of wettability in materials processing, namely infiltration processing, joining dissimilar materials by brazing and selecting crucibles for crystallising liquid metals and semiconductors. The review includes results obtained during the last 15 years mainly, but not only, by the Grenoble group.

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Section: Wetting In Infiltrationmentioning

confidence: 99%

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Eustathopoulos

2015

Metals

133

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“…There is no general agreement about the mechanism of formation of this SiC precursor layer. In particular, it is not clear if this layer is formed before the arrival of liquid silicon due to the solid‐vapor reaction or if the reaction occurs only in proximity of the infiltration front . As the reaction between graphite and liquid silicon proceeds behind the infiltration front, the growth of the SiC layer can partially occlude the pores, inhibiting and eventually blocking infiltration.…”

Section: Introductionmentioning

confidence: 99%

Microwave heating controlled reactive melt infiltration for graphite‐Si‐SiC ceramics manufacturing

et al. 2018

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In this work, we investigated a procedure which exploits microwave ovens to produce SiC-based components by reactive melt infiltration of silicon into graphite preforms. The employed oven is designed to grant optical access to the sample surface, which allows to measure its temperature evolution though a noncontact pyrometer. This signal was used as a feedback to control the power provided to the preform and as an experimental output whose analysis provides insight into the reaction mechanism. Specifically, it is found that complete infiltration is achieved much before the end of the reaction. The latter is not fully self-sustained as the global reaction rate continuously decreases with time until it is no more able to keep the temperature above the silicon solidification value. At that point, the reaction stops. The analysis of the processed samples proved that this procedure allows producing fully infiltrated samples without material failure by adjusting the heat provided during the infiltration stage rather than by tuning the preform structure and composition, which is the usual approach. The proposed method is less time and energy consuming than the standard one.

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“…According to Darcy' s law and modify Washburn equation [27,28], ℎ = 2 / , where h is infiltration height, δ is surface tension, θ is contact angle, ρ is density. In the present research, δ=0.72 N/m at 1550 °C, θ=22 ° for silicon versus carbon in vacuum, ρ=2.55 g/cm 3 at 1550 °C [29]. When the infiltration height h=100 mm and 50 mm, the threshold value of pore size r=556 μm 9 and r=1113 μm, respectively.…”

Section: Resultsmentioning

confidence: 50%

Silicon carbide-based foams derived from foamed SiC-filled phenolic resin by reactive infiltration of silicon

Song

Zhang

Yang

et al. 2016

Ceramics International

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Capillary infiltration studies of liquids into 3D-stitched C–C preforms

Cited by 37 publications

References 10 publications

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Microwave heating controlled reactive melt infiltration for graphite‐Si‐SiC ceramics manufacturing

Silicon carbide-based foams derived from foamed SiC-filled phenolic resin by reactive infiltration of silicon

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