Capture Kinetics of the Individual DX Center Levels

Su, Ziyue; Farmer, J. W.

doi:10.4028/www.scientific.net/msf.83-87.817

Cited by 6 publications

(2 citation statements)

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“…The splitting of the top of the barrier could be visible in capture processes while the splitting of the ground state can be evaluated by measuring the number of electrons emitted from various sublevels at thermal equilibrium. Mooney et al [24] and recently Su and Farmer [34] analyzed the amplitude of the DLTS peaks. In junction spectroscopy, however, it is very difficult to reach equilibrium during the filling pulse.…”

Section: Alloy Splittingmentioning

confidence: 99%

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DX Puzzle: Where Are We Now?

1992

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A brief review of the experimental data on the metastable DX-centers in AlGaAs is presented. The experimental proofs of the two-electron nature and of the intermediate, one-electron state of the DX-centers are discussed. We collect the available experimental data on the ground state, electron-emission and capture energies and we discuss the nature of the lattice barrier. The effect of splitting of these energies in AlGaAs alloys and the consequences of the splitting on the capture and emission kinetics are analyzed. The different character of the barrier and of the alloy splitting for donors of the IV and VI group is underlined. The necessity to consider the interdonor Coulomb interaction when discussing the experimental data is also pointed out.

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Section: Alloy Splittingmentioning

confidence: 99%

“…In junction spectroscopy, however, it is very difficult to reach equilibrium during the filling pulse. Only the investigation of Su and Farmer [34] were performed for a wide range of filling pulses. Another set of experimental data was presented by Piotrzkowski et al [25].…”

Section: Alloy Splittingmentioning

confidence: 99%

DX Puzzle: Where Are We Now?

1992

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DX center in AlGaAsSb:Te and a mechanism of its ionization

Terziev

Hubík

Krištofik

et al. 1996

Journal of Applied Physics

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The Te-related DX center in Al 0.3 Ga 0.7 As 0.02 Sb 0.98 layers of p-n junctions and avalanche photodiodes has been studied by capacitance-voltage, deep level transient spectroscopy, and direct capacitance transient measurements. A process of DX center ionization under high reverse bias conditions has been observed at temperatures where the thermal emission is negligible. The kinetics and reverse bias dependence of this process has been studied and analyzed. A mechanism of photon generation in the high-electric-field region of the devices and a subsequent photoionization of the DX center has been proposed.

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Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs

Shiraki

Tokuda

Sassa

1998

Journal of Applied Physics

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We report characteristic behaviors of medium-deep electron traps (EL5, EL6, etc.) in n-type bulk GaAs crystals observed by isothermal constant-capacitance–voltage transient spectroscopy (CCVTS). Each CCVTS spectrum of EL5 and EL6 was broader than a theoretical one expected for a single level, and was found to consist of more than two trap components. Anomalous filling time dependence of CCVTS peak heights for these traps was observed when the filling pulse width was varied in a wide range, i.e., one component of EL6 decreased to about 50% of its maximum, while one component of EL5 increased and saturated. The decrement of the constituent of EL6 was nearly equal to the increment of that of EL5. These variations could be reversed by controlling electron occupation fractions of these traps by means of changing the interval time between two adjacent filling pulses in application of the isothermal “double-pulse CCVTS” method. Such interaction was commonly observed in n-type bulk GaAs irrespective of carrier concentration and growth method. These behaviors of medium-deep electron traps are interpreted well by a model of an electronically controlled bistable reaction.

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Capture Kinetics of the Individual DX Center Levels

Cited by 6 publications

References 0 publications

DX Puzzle: Where Are We Now?

DX Puzzle: Where Are We Now?

DX center in AlGaAsSb:Te and a mechanism of its ionization

Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs

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