Carbon and silicon in travelling heater method grown semi-insulating CdTe

Chibani, L.; Hage‐Ali, M.; Stoquert, J.P.; Koebel, J.M.; Siffert, P.

doi:10.1016/0921-5107(93)90044-n

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Cited by 15 publications

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“…"* For the band 0.16 -0.21 eV the concentration of these levels increase with the resistivity [5,6]. "* We find again a band around nearly 0.28 eV which characterizes generally our BM ingots, another band at nearly 0.5 -0.55 eV appears in high pressure BM CdZnTe.…”

Section: Resultsmentioning

confidence: 90%

Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.

et al. 1994

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The properties of Cadmium Telluride are very sensitive to impurities. The growth method has also a strong impact on the material characteristics. Crystals grown by THM have good X-ray detector properties, while normal undoped Bridgman grown crystals do not detect. We have grown pure and doped samples by Bridgman and THM methods. As doping materials we used V, Zn and Cl, also in different combinations. The samples were characterized by several methods, including resistivity, TSC and nuclear detection measurements.

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Section: Resultsmentioning

confidence: 90%