Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

Brunner, F.; Bergunde, T.; Richter, E.; Kurpas, P.; Achouche, M.; Maaßdorf, A.; Würfl, Joachim; Weyers, M.

doi:10.1016/s0022-0248(00)00648-5

Cited by 18 publications

(10 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of a low V/III ratio to obtain high Cdoping levels has frequently been reported to result in an increased surface roughness of the epitaxial layers [19,21,35]. In the present work a deteriorated surface was obtained for a combination of high temperature (X650 1C) and low V/III ratio (p1.0) at an x G of 0.36.…”

Section: Resultsmentioning

confidence: 63%

“…As mentioned, a decrease of V/III ratio gives rise to an increase in carbon concentration [19]. Doping levels in GaAs in the order of 10 20 cm À3 were reported for V/III ratios around 1 [21,22], whereas a further decrease of the V/III ratio resulted in a small decrease of the hole concentration [21,22].…”

Section: Introductionmentioning

confidence: 93%

“…However, it was observed that the use of CCl 4 causes a strong reduction of growth rate [4,13], which was attributed to the etching of GaAs by Cl [14][15][16]. Although most groups tend to use CCl 4 , CBr 4 was also found to give high doping levels by some authors [17][18][19]. Most recently, the use of CCl 3 Br was reported by Uchida et al [20] in an attempt to reduce the etching of GaAs.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Deelen

Bauhuis

Schermer

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Deelen

Bauhuis

Schermer

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The intrinsic incorporation of carbon from the methyl radicals produced during the MOVPE growth is still more promising, since it avoids the introduction of extrinsic dopants and improves the device properties [5].…”

Section: Introductionmentioning

confidence: 99%

Electrical investigation of carbon intrinsically‐doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs

Ghezzi

Longo

Magnanini

et al. 2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

In this work the possibility of controlling carbon intrinsic-doping in GaAs homoepitaxial layers grown by metalorganic vapour phase epitaxy (MOVPE) from the trimethyl-gallium (TMGa) and tertiary-buthylarsine (TBAs) precursors was evaluated via the analysis of transport properties as a function of the growth parameters and for two substrates mis-orientations; Hall effect measurements were performed on the samples as a function of temperature. Intrinsically p-doped GaAs layers were obtained with a hole concentration in the range (10 14 -10 18 ) cm -3 and a corresponding RT mobility in the range (100 -400) cm 2 /Vs. The simultaneous analysis of the Hall free hole density and Hall mobility yielded the effective doping level, the compensation ratio and the thermal ionisation energy of the acceptor impurity as a function of the growth parameters.

show abstract

“…On the other hand, in the case of extrinsic doping, limitations related to compensation effects, hydrogen passivation and low lifetime for minority carriers, have been reported when Carbon tetrabromide (CBr 4 ) or Carbon tetrachloride (CCl 4 ) are used [10]; however, in the intrinsic Carbon doping, some drawbacks related to the surface morphology of heavily doped layers have been reported [11]. We have previously demonstrated that it is possible to control the intrinsic Carbon doping in MOVPE grown GaAs layers by using trimethyl gallium (TMGa) and the less hazardous, high-purity As source tertiary buthyl arsine (TBAs) [12,13] in a wide range of hole concentrations (between 10 14 and 10 18 cm -3 ).…”

Section: Introductionmentioning

confidence: 99%

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

The properties of Zinc-doped GaAs, grown by MOVPE employing the tertiary buthyl arsine precursor, were studied as a function of the doping level, comprised within the (1×10) range. Hall effect measurements were performed as a function of temperature; the simultaneous analysis of the Hall hole density and Hall mobility gave the effective doping concentration, the thermal ionisation energy of the acceptor impurities and the compensation ratio. Fast Fourier Transform Photoluminescence measurements were performed on the GaAs layers; the results were correlated with those obtained from the electrical analysis. A comparison of the obtained data with the results of an analogous investigation, previously performed on intrinsically Carbon doped GaAs layers, allowed the following conclusions: a) the GaAs layers exhibit a low content of non-intentional impurities (< 10 14 cm -3); b) both Zinc and Carbon show a low compensation ratio; c) both Carbon and Zinc doped layers show electrical and optical properties comparable with the state of the art; d) Carbon intrinsic doping appears preferable for low-medium carrier concentrations, while Zinc appears preferable for medium-high carrier concentrations (higher than about 5×10 17 cm -3 ).

show abstract

Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

Cited by 18 publications

References 11 publications

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Electrical investigation of carbon intrinsically‐doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Contact Info

Product

Resources

About