Carbon etching with a high density plasma etcher

Pears, Kevin A.; Stolze, Jens

doi:10.1016/j.mee.2005.02.002

Cited by 20 publications

(13 citation statements)

References 2 publications

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“…Carbon etching techniques using oxidation have been extensively studied [ 25 , 26 ]. If the metal used as an electrode, however, is unintentionally oxidized in the application, such as a sensor, the energy band gap of the metal electrode employed by the metal oxide layer may increase, causing the sensor’s sensitivity to decrease.…”

Section: Methodsmentioning

confidence: 99%

Innovative Method Using Adhesive Force for Surface Micromachining of Carbon Nanowall

et al. 2020

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The application of a carbon nanowall (CNW) via transfer is very demanding due to the unusual structure of vertically grown wall-shaped that easily collapses. In addition, direct growth on a device cannot obtain a precision-patterned shape because of the temperature limit of the photoresist (PR). Therefore, in this paper, we demonstrate a new CNW surface micromachining technology capable of direct growth. In order to reduce unexpected damage caused by chemical etching, a physical force was used to etch with the adhesive properties of CNWs that have low adhesion to silicon wafer. To prevent compositing with PR, the CNW was surface modified using oxygen plasma. Since there is a risk of surface-modified CNW (SMCNW) collapse in an ultrasonic treatment, which is a physical force, the CNW was coated with PR. After etching the SMCNW grown on PR uncoated area, PR was lifted off using an acetone solution. The effect on the SMCNW by the lift-off process was investigated. The surface, chemical, and structural properties of PR-removed SMCNW and pristine-SMCNW were compared and showed a minimal difference. Therefore, the CNW surface micromachining technique was considered successful.

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Section: Methodsmentioning

confidence: 99%

Innovative Method Using Adhesive Force for Surface Micromachining of Carbon Nanowall

et al. 2020

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“…[11][12][13][14][15][16] Carbon hard masks combined with a thin dielectric capping layer enable to pattern very thin resist films ͑below 100 nm͒, which enable the fabrication of sub-50-nm and very dense patterns, with a good degree of reproducibility. 11,12,17 For this study, the carbon hard mask was capped with a thin silicon oxide layer ͑Fig.…”

Section: B Amorphous Carbon Hard Mask Techniquementioning

confidence: 99%

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Pauliac-Vaujour

Comboroure

Vizioz

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inBandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations J. Appl. Phys. 109, 064312 (2011); 10.1063/1.3559265 Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors Appl. Phys. Lett. 97, 073505 (2010); 10.1063/1.3480424Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

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“…Despite the great potential of such materials, their patterning is still challenging and usually depends on complex processing involving multilayer masks and elaborate etching schemes [6][7][8][9], relies on costly low throughput patterning [10], or has very limited feasibility [11]. However, well-defined DLC microand nanostructures are highly desirable for variety of optical and MEMS devices [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask

Virganavičius

Cadarso

Kirchner

et al. 2016

Applied Surface Science

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Patterning of diamond-like carbon (DLC) and DLC:metal nanocomposites is of interest for an increasing number of applications. We demonstrate a nanoimprint lithography process based on silicon containing thermoplastic resist combined with plasma etching for straightforward patterning of such films. A variety of different structures with few hundred nanometer feature size and moderate aspect ratios were successfully realized. The quality of produced patterns was directly investigated by the means of optical and scanning electron microscopy (SEM). Such structures were further assessed by employing them in the development of gratings for guided mode resonance (GMR) effect. Optical characterization of such leaky waveguide was compared with numerical simulations based on rigorous coupled wave analysis method with good agreement. The use of such structures as refractive index variation sensors is demonstrated with sensitivity up to 319 nm/RIU, achieving an improvement close to 450% in sensitivity compared to previously reported similar sensors. This pronounced GMR signal fully validates the employed DLC material, the technology to pattern it and the possibility to develop DLC based gratings as corrosion and wear resistant refractometry sensors that are able to operate under harsh conditions providing great value and versatility.

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Carbon etching with a high density plasma etcher

Cited by 20 publications

References 2 publications

Innovative Method Using Adhesive Force for Surface Micromachining of Carbon Nanowall

Innovative Method Using Adhesive Force for Surface Micromachining of Carbon Nanowall

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask

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