Carbon nanotube based via interconnects: Performance estimation based on the resistance of individual carbon nanotubes

Fiedler, Holger; Toader, Marius; Hermann, Sascha; Rodriguez, Raúl D.; Sheremet, Evgeniya; Rennau, M.; Schulze, Steffen; Waechtler, Thomas; Hietschold, Michael; Zahn, Dietrich R. T.; Schulz, Stefan; Geßner, Thomas

doi:10.1016/j.mee.2013.07.007

Cited by 13 publications

(12 citation statements)

References 32 publications

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“…Carbon nanotubes (CNTs) offer a large variety of properties [Cha07,Cre08,Sca12], which can be very useful for future electronic devices. One of them is the very high conductance in the ballistic regime [Whi98] that makes CNTs attractive for metallic interconnect systems [Kre02,Van14,Fie14,Fie13]. Although research on CNTs has continued for many years since their discovery in 1991 and clean CNTs approaching the theoretical conductance limit can be produced under well-defined laboratory conditions [Kon01], current CNT-based devices at the wafer level which means a fast and reproducible fabrication are still not reaching that limit.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Teichert

Zienert

Schuster

et al. 2017

Computational Materials Science

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We study the electron transport in metallic carbon nanotubes (CNTs) with realistic defects of different types. We focus on large CNTs with many defects in the mesoscopic range. In a recent paper we demonstrated that the electronic transport in those defective CNTs is in the regime of strong localization. We verify by quantum transport simulations that the localization length of CNTs with defects of mixed types can be related to the localization lengths of CNTs with identical defects by taking the weighted harmonic average. Secondly, we show how to use this result to estimate the conductance of arbitrary defective CNTs, avoiding time consuming transport calculations

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Section: Introductionmentioning

confidence: 99%

Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Teichert

Zienert

Schuster

et al. 2017

Computational Materials Science

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“…Afterwards a 2.3 nm Ni catalyst layer is deposited by electron-beam evaporation and multi-walled CNTs (MWCNTs) are grown within the vias by thermal chemical vapor deposition (CVD) at a temperature of 600 °C using ethylene as carbon precursor. Details regarding the CNT growth recipe can be found elsewhere [10]. The CNTs then were embedded into SiO 2 using a tetraethylorthosilicate (TEOS) and ozone sub-atmospheric pressure CVD process, planarized by chemical mechanical planarization (CMP), and subjected to a HF treatment which involves exposing the CNT tips for 20 s to HF vapor and annealing the sample for 1 min on a hotplate at 150 °C.…”

Section: Methodsmentioning

confidence: 99%

“…One potential candidate to replace Cu are carbon nanotubes (CNTs) due to their extraordinary properties, such as high resistance towards electromigration [2], high thermal conductance [3] and a large electron mean free path [4]. However, major challenges for the integration of CNTs into interconnects are a sufficient CNT density [5], a low metal-CNT contact resistance [6] and a high CNT quality [7]. For multi-walled CNTs (MWCNTs) a linear increase of the resistance with the CNT length is generally assumed [8], but for single walled CNTs Anderson localization has also been observed [7].…”

Section: Introductionmentioning

confidence: 99%

Localization length of integrated multi-walled carbon nanotubes

Fiedler

Hermann

Rennau

et al. 2014

IEEE International Interconnect Technology Conference

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We prepared CNT based vias on wafer scale. Based on the electrical characterization we extracted the localization length of the CNTs. While for short CNTs the classical transport regime is valid, the Anderson localization regime applies for longer CNTs. Supplementary the characteristic length scales were estimated based on the structure of the CNTs being in good agreement with the parameters extracted from the electrical measurements

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“…CNT vias connecting different metal levels of an integrated circuit are potential candidates to replace copper ones. With tip radii of the order of 20 nm, the size ranges of the probe (metallized AFM tip) and sample (individual MWCNT) are comparable, the wafer‐level fabrication process yields an appropriate mechanical stability and contaminations directly relate to the variation of the local conductivity properties (see below), therefore CNT vias appeared as ideal sample to verify the opportunities of CS‐AFM as an advanced nanoscale characterization technique. The analysis of CNT via samples with CS‐AFM reveals that different CNT vias yield a map of locally different conductivity as shown in Figure (left) .…”

Section: Electrical Propertiesmentioning

confidence: 99%

Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

Sheremet

Meszmer

Blaudeck

et al. 2019

Physica Status Solidi (a)

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The present study covers the nanoanalysis methods for four key material characteristics: electrical and electronic properties, optical, stress and strain, and chemical composition. With the downsizing of the geometrical dimensions of the electronic, optoelectronic, and electromechanical devices from the micro to the nanoscale and the simultaneous increase in the functionality density, the previous generation of microanalysis methods is no longer sufficient. Therefore, the metrology of materials' properties with nanoscale resolution is a prerequisite in materials' research and development. The article reviews the standard analysis methods and focuses on the advanced methods with a nanoscale spatial resolution based on atomic force microscopy (AFM): current-sensing AFM (CS-AFM), Kelvin probe force microscopy (KPFM), and hybrid optical techniques coupled with AFM including tip-enhanced Raman spectroscopy (TERS), photothermal-induced resonance (PTIR) characterization methods (nano-Vis, nano-IR), and photo-induced force microscopy (PIFM). The simultaneous acquisition of multiple parameters (topography, charge and conductivity, stress and strain, and chemical composition) at the nanoscale is a key for exploring new research on structure-property relationships of nanostructured materials, such as carbon nanotubes (CNTs) and nano/microelectromechanical systems (N/MEMS). Advanced nanocharacterization techniques foster the design and development of new functional materials for flexible hybrid and smart applications.

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Carbon nanotube based via interconnects: Performance estimation based on the resistance of individual carbon nanotubes

Cited by 13 publications

References 32 publications

Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Localization length of integrated multi-walled carbon nanotubes

Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

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