Nanocrystal-based electronic devices with multiple functionalities offer one avenue toward novel passive and active electronic components. Here, we exhibit a planar and fully air-processed thin film device that demonstrates a photoinduced memristive behavior and can be used as a transistor, photodetector, or memory device. Following long-term (60 h) air exposure, unpackaged nanocrystal films develop reliable memristive characteristics in tandem with temperature, gate, and photoresponse. The on/off values of more than 50 are achieved, and the devices show long-term stability, producing repeatable metrics over days of measurement. The on/off behavior is shown to be dependent on the previous charge flow and carrier density, implying a memristive rather than switching behavior. These observations are described within a long-term trap-filling model. This work represents an advance in the integration of nanocrystal films into electronic devices, which may lead to the development of multifunctional electronic components.

We report on the design and fabrication of carbon nanotube (CNT) vias based on a hybrid metal/CNT technology. The CNTs were integrated on a 4 inch Si wafer platform using conventional semiconductor processes. Multiwalled carbon nanotubes were grown vertically aligned on a copper based metal line. Via holes were prepared using a single damascene process. By employing a substratebased selective deactivation of the catalyst, CNT growth was restricted to the vias. Following this process scheme, the impact of post-CNT growth procedures, like chemical mechanical planarization and sample annealing, were investigated and electrically evaluated using conductive atomic force microscopy and current-voltage (I-V) characterization. Probing 440 individual structures, the resistance of two series-connected 5 μm vias were determined to be (800 ± 60) after chemical mechanical planarization. By obtaining the I-V characteristics of single CNTs within an individual via, we found that the measured resistance is determined by the contact resistance of the CNT-metal interface. Two mechanisms were found to be relevant here. First partial oxidation of the metal interface during processing, and secondly, stress-induced voiding caused by the high temperatures during the CNT growth process. Changes in the integration scheme to reduce the overall CNT via resistance are proposed. Continuous down-scaling of the interconnect structures in ultralarge-scale-integrated electronic devices causes deterioration of the resistivity and reliability of copper lines. The International Technology Roadmap for Semiconductors (ITRS) proposed several emerging technologies to replace copper in future interconnect schemes.1 Among them, carbon nanotubes (CNT) are very promising due to their extraordinary electrical properties.2,3 Also the thermal properties of CNTs are highly beneficial for interconnect applications. Due to their one dimensional nature the thermal conduction is anisotropic with a longitudinal thermal conductivity, which can be as large as 6000 W/mK. [4][5][6] Furthermore, due to the strong sp 2 hybridized carbon bonds the CNTs exhibit an extraordinary mechanical strength leading to a large current carrying capacity, which can reach values three orders of magnitude higher than copper. [1][2][3] Currently research of CNT interconnects focuses on vias.7-18 Main challenges hereby are the compatibility with the Back-end-of-the-line (BEOL) technology requirement, 7 while simultaneously a high CNT quality and a large CNT density is required. 17 Various substrate materials for CNT growth are used by different groups. In recent reports the diffusion barrier TiN is used as conductive material. 11,12,15 Focussing on the application of CNTs for local interconnects, CNT based vias were prepared using Poly-Si as conductive substrate. 8Also CNT growth behavior on unstructured samples was investigated using Ta as substrate material, which is a typical liner material in BEOL. 19,20 Besides this work, the group of Awano, 10,13,18 incorporates a Cu line in conjunc...

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Zusammenfassung Hintergrund und Ziel Letzte-Hilfe-Kurse können Bürger befähigen, mehr Menschen ein Sterben zu Hause zu ermöglichen. Ziel der Studie ist die Evaluation der neu etablierten Letzte-Hilfe-Kurse für Kinder und Jugendliche. Materialien und Methoden Neun Letzte-Hilfe-Kurse für Kinder und Jugendliche mit insgesamt 128 Teilnehmern von 9–17 Jahren wurden durchgeführt. Die Evaluation basiert auf mixed-methods und erfolgte mittels eines Fragebogens. Ergebnisse 120 von 128 Teilnehmern (94 %) nahmen an der Evaluation teil. Die Teilnehmer schätzten die Möglichkeit, über Tod und Sterben zu reden. 94 % fanden den Kurs hilfreich für alle und 92 % wollen ihn weiterempfehlen. 89 % fanden die Kursinhalte leicht zu verstehen. Schlussfolgerungen und Ausblick Die Kurse für Kids/Teens werden von den Teilnehmern sehr gut angenommen. In Zukunft sollten die Kurse weiter verbreitet und in die Schulcurricula aufgenommen werden, um Informationen und Austausch zu Sterben und Begleitung am Lebensende zu ermöglichen.