Metal-halide perovskites are at the frontier of optoelectronic research due to solution processability and excellent semiconductor properties. Here we use transient absorption spectroscopy to study hot-carrier distributions in CH3NH3PbI3 and quantify key semiconductor parameters. Above bandgap, non-resonant excitation creates quasi-thermalized carrier distributions within 100 fs. During carrier cooling, a sub-bandgap transient absorption signal arises at ∼1.6 eV, which is explained by the interplay of bandgap renormalization and hot-carrier distributions. At higher excitation densities, a ‘phonon bottleneck' substantially slows carrier cooling. This effect indicates a low contribution from inelastic carrier-impurity or phonon–impurity scattering in these polycrystalline materials, which supports high charge-carrier mobilities. Photoinduced reflectivity changes distort the shape of transient absorption spectra and must be included to extract physical constants. Using a simple band-filling model that accounts for these changes, we determine a small effective mass of mr=0.14 mo, which agrees with band structure calculations and high photovoltaic performance.
Hollow micro-/nano-structured materials are now playing an important role in cutting edge innovations for energy conversion and storage technologies such as solar cells, fuel cells, lithium ion batteries and super capacitors. These materials show great promise in addressing growing environmental concerns for cleaner power sources at a time of increasing global demand for energy. In this perspective, we show that complex multi-shelled micro-/nano-materials show significant material advantages in many applications over conventional simple hollow structures. We also summarize the vast array of synthetic strategies used to create multi-shelled hollow structures, and discuss the possible application of these novel materials for power generation and storage. Finally, the emergent challenges and future developments of multi-shelled hollow structures are further discussed.
Improvements in quantum dot light-emitting device (QD-LED) performance are achieved by the choice of organic charge transporting layers, by use of different colloidal QDs for the different parts of the visible spectrum, and by utilizing a recently demonstrated robust QD deposition method. Spectrally narrow electroluminescence of our QD-LEDs is tuned over the entire visible wavelength range from lambda = 460 nm (blue) to lambda = 650 nm (deep red). By printing close-packed monolayers of different QD types inside an identical QD-LED structure, we demonstrate that different color QD-LEDs with QDs of different chemistry can be fabricated on the same substrate. We discuss mechanisms responsible for efficiency increase for green (4-fold) and orange (30%) QD-LEDs as compared to previous reports and outline challenges associated with achieving high-efficiency blue QD-LEDs.
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