Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview

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A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. IndexTerms-Carbon nanotube field-effect transistor (CNTFET), compact transistor modeling, high-frequency circuit design.

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confidence: 99%

“…A critical review of the existing compact models was given in [3] and [9]. The results of that analysis can be summarized as follows.…”

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confidence: 99%

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

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“…The developed semi-empirical formulation of the subthreshold current allows to accurately describe the experimental data. The implementation of the derived analytical I − V expressions in Verilog-A, which is supported by all commercially available circuit simulators, along with a physics-based charge expression will support accurate and predictive simulation needed for designing mixed-signal and analog high-frequency circuits [55]. The total current is differentiable throughout all regions of operation.…”

Section: Discussionmentioning

confidence: 99%

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Bejenari

Schröter

Claus

2017

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Abstract-A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the FermiDirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub 10 nm CNTFETs.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), tunneling, Wentzel-Kramers-Brillouin (WKB) approximation.

“…CNT FETs have also shown superior mobility and threshold voltage variability characteristics due to the lower atomic dislocations present in the channel. Single wall (SW) CNT (SWCNT) FETs exchibit ballistic transport that makes these devices better candidates for RF performance [66]- [68].…”

Section: Thin Film 2-d Material and Nanotube Transistorsmentioning

confidence: 99%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).