Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

Zhang, Kai; Chai, Yang; Yuen, Matthew Ming Fai; Xiao, David G. W.; Chan, Peggy

doi:10.1088/0957-4484/19/21/215706

Cited by 144 publications

(64 citation statements)

References 23 publications

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“…[1][2][3][4] Carbon nanotubes (CNTs), with extremely high intrinsic thermal conductivity [5][6][7] and expected as one of the best thermal interface materials (TIMs), [8][9][10] have been directly synthesized on silicon substrates, [10][11][12][13] aiming to improve the heat dissipation in Si-based electronics. However, the experimentally measured interfacial thermal conductance is exceptionally low, 14,15 which is not promising enough for efficient energy dissipation.…”

Section: Introductionmentioning

confidence: 99%

Thermal rectification at silicon/horizontally aligned carbon nanotube interfaces

Zhang¹,

Hu²,

Tang³

2013

Journal of Applied Physics

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Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene nanoribbon-silicon interfacesNon-equilibrium molecular dynamics simulations were performed to investigate the thermal rectification effect of a system composed of a 400 nm long horizontally aligned single-walled (10, 10) carbon nanotube (CNT) and Si substrate. By imposing a series of positive and negative heat currents across the interface, a thermal rectification effect was observed. The maximum thermal rectification is about 184% when the interfacial heat flux is 60 W/m, which is very promising for thermal rectifier applications. By phonon-related analysis, we found that for heat flowing from Si to CNT, the increase of the interfacial thermal conductance with heat flux is due to the better match of phonon density of states between CNT and Si substrate at broad moderate frequencies, while for heat flowing from CNT to Si, the low-frequency phonon modes excited at large heat fluxes dominate the interfacial heat transfer and such low-frequency phonon mode mechanism is responsible for the thermal rectification effect. Moreover, we proposed a simple yet very useful method to quantify the directional contributions of lattice vibrations to the total interfacial heat flux and we demonstrated that the out-of-plane lattice vibrations at the interface dominate the heat transfer across the silicon/horizontally aligned carbon nanotube interfaces. V C 2013 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Thermal rectification at silicon/horizontally aligned carbon nanotube interfaces

Zhang¹,

Hu²,

Tang³

2013

Journal of Applied Physics

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“…This is significantly higher than copper where k is 400 W/m·K. Furthermore, the thermal contact resistance of CNT arrays with a copper interface is reported to be only about 10 mm 2 K/W [4]. Thus, CNTs are exhibiting very promising results for usage as a TIM.…”

Section: Introductionmentioning

confidence: 99%

“…Simple and efficient methods for growing highly aligned and densely packed CNTs on silicon surfaces were demonstrated in [4]. Horizontal and vertical aligned CNTs were presented in [5].…”

Section: Introductionmentioning

confidence: 99%

Case study: Alleviating hotspots and improving chip reliability via carbon nanotube thermal interface

Zhang

Huang

Yang

et al. 2011

2011 Design, Automation &Amp; Test in Europe

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The increasing power consumption of integrated circuits (ICs) enabled by technology scaling requires more efficient heat dissipation solutions to improve overall chip reliability and reduce hotspots. Thermal interface materials (TIMs) are widely employed to improve the thermal conductivity between the chip and the cooling facilities. In recent years, carbon nanotubes (CNTs) have been proposed as a promising TIM due to their superior thermal conductivity. Some CNT-based thermal structures for improving chip heat dissipation have been proposed, and they have demonstrated significant temperature reduction. In this paper, we present an improved CNT TIM design which includes a CNT grid and thermal vias to dissipate heat more efficiently to obtain a more uniform chip thermal profile. We present simulation-based experimental results that indicate a 32% / 25% peak temperature reduction and 48% / 22% improvement in chip reliability for two industrial processor benchmarks, showing the effectiveness of our proposed thermal structure.

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“…While many examples are available of growing vertical CNT at moderate to low temperatures using CVD for the fabrication of CNT test vias [5,14e19,12], or thermal interface materials [20,21], none of these examples demonstrates the possibility of growing CNT directly on existing electronic circuits. In this work we integrated CNT, grown using Co on TiN support layers, as vertical interconnects into a monolithic 3D IC process in order to demonstrate the possibility of the direct integration of CNT in IC.…”

Section: Introductionmentioning

confidence: 99%

The direct growth of carbon nanotubes as vertical interconnects in 3D integrated circuits

Vollebregt

Ishihara

2016

Carbon

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a b s t r a c tCarbon nanotubes (CNT) have been proposed for many applications in integrated circuits (IC): ranging from transistors and interconnects to sensors and actuators. For these applications it is crucial to integrate CNT directly alongside electronics, something which has not been achieved before. In this work we demonstrate the direct growth of CNT alongside CMOS devices, by integrating CNT as vertical interconnect (vias) in a monolithic 3D IC process using techniques and materials compatible with semiconductor technology. The electrical performance of both the CNT vias and the electrical devices is investigated and compared with the literature. From this we can conclude that the CNT growth has no significant impact on the electrical devices, although the resistance of the CNT should be further reduced to compete with metal interconnects. This demonstrates the viability of integrating CNT with IC, which is an important step forward in the application of CNT in electronics.

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Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling

Cited by 144 publications

References 23 publications

Thermal rectification at silicon/horizontally aligned carbon nanotube interfaces

Thermal rectification at silicon/horizontally aligned carbon nanotube interfaces

Case study: Alleviating hotspots and improving chip reliability via carbon nanotube thermal interface

The direct growth of carbon nanotubes as vertical interconnects in 3D integrated circuits

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