Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition

Katagiri, Masayuki; Sakuma, Naoko; Suzuki, Mariko; Sakai, Tadashi; Sato, Shintaro; Hyakushima, Takashi; Nihei, Misato; Awano, Yuji

doi:10.1143/jjap.47.2024

Cited by 27 publications

(21 citation statements)

References 9 publications

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“…Carbon nanotubes (CNTs) hold potential applications in many technologies, including interconnects in integrated circuits, field emitters, sensors, drug deliveries and thermal management surfaces 1–6. Some of these applications require densely‐packed vertically‐aligned (VA) CNTs on support materials.…”

Section: Introductionmentioning

confidence: 99%

Carbon nanotubes growth: From entanglement to vertical alignment

Esconjauregui

Fouquet

Bayer

et al. 2010

Physica Status Solidi (b)

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By using oxidising environments during catalyst formation, SiO 2 -supported thin Ni films restructure into small nanoparticles of reduced mobility that nucleate vertically-aligned carbon nanotubes (CNTs) by base mode. Conversely, typical reducing environments yield entangled nanotubes only, which grow by tip mode. The selection of pretreatment environments proves control over nanotube morphology and growth mode, and can be of interest for the surface growth of other nanostructures.

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Section: Introductionmentioning

confidence: 99%

Carbon nanotubes growth: From entanglement to vertical alignment

Esconjauregui

Fouquet

Bayer

et al. 2010

Physica Status Solidi (b)

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“…the electrical properties of multiwalled CNT bundles grown by chemical vapor deposition (CVD) have been intensively investigated for interconnect applications [1][2][3][4]. Lowtemperature growth of CNTs is one of the most fundamental issues to be resolved for development of CNT based on interconnects technology compatible with LSI manufacturing processes.…”

mentioning

confidence: 99%

Towards the low temperature growth of uniform diameter multi walled carbon nanotubes by catalytic chemical vapour deposition technique

Somanathan

Pandurangan

2010

Nano-Micro Lett

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Mesoporous MCM-41 molecular sieves containing f-block transition elements (gadolinium) with various Si/Gd ratios (50, 75 and 100) were synthesised by a hydrothermal method. Their mesoporous structure was confirmed by X-ray diffraction, nitrogen sorption studies, thermogravimetric analysis, scanning and transmission electron microscopy. The local environment of Gd in the material was studied by electron paramagnetic resonance. The compatibility of the catalyst for the synthesis of uniform diameter CNTs by varying the temperature from 400 to 650°C with fixed flow rates of N 2 and C 2 H 2 (140 ml/min and 40 ml/min, respectively). The product is mostly metal containing thin MWCNTs with diameter of 10a20 nm. Characterisation shows that a combination of Gd-MCM-41 (100) catalyst gives a high yield of high quality MWCNTs under optimum growth conditions. [7]. The major drawback of arc discharge and laser evaporation methods is that they are extremely uncontrolled in terms of process parameters, resulting in CNTs that contains significant fractions of unwanted material and that are difficult to manipulate and assemble in specific designs. CVD method is based on the thermal decomposition of hydrocarbon compounds over transition metal catalyst particles.It appears to be a simple and economic technique to synthesize this kind of material at a low temperature, ambient pressure and it represents the best hope for large scale production.To date, all the metal-catalyzed CNT growth studies have mainly focused on transition metals. Curiously, f-block transition elements also referred to as inner transition elements have still not been well explored. One reason could be that inner transition elements are not known to be highly catalytic as the transition elements. It has also been suggested that lanthanoids such as gadolinium and europium exhibit insufficient carbon solubility, slow carbon diffusion, and limited carbide formation to catalyze CNT growth [8]. Recently, gadolinium and europium were used

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“…Carbon nanotubes ͑CNTs͒ have many potentially uses in electronics, as interconnects in integrated circuits, field emitters, supercapacitor electrodes, sensors, or thermal management surfaces. [1][2][3][4][5][6] Many such applications require small diameter nanotubes in the form of densely packed vertically aligned mats on conducting substrates. There are two ways to obtain vertically aligned CNTs ͑VACNTs͒.…”

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confidence: 99%

Growth of high-density vertically aligned arrays of carbon nanotubes by plasma-assisted catalyst pretreatment

Esconjauregui

Bayer

Fouquet

et al. 2009

Applied Physics Letters

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A plasma-assisted thermal pretreatment of catalyst films ͑Ni, Co, or Fe͒ greatly facilitates the direct growth of high-density vertically aligned arrays of small diameter carbon nanotubes ͑CNTs͒ on conductive TiN by purely thermal chemical vapor deposition. Purely thermal catalyst pretreatment gives limited or no growth. The plasma-assisted pretreatment promotes a stronger catalyst-support interaction, which reduces catalyst mobility and hence stabilizes smaller catalyst particles with a higher number density.

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Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition

Cited by 27 publications

References 9 publications

Carbon nanotubes growth: From entanglement to vertical alignment

Carbon nanotubes growth: From entanglement to vertical alignment

Towards the low temperature growth of uniform diameter multi walled carbon nanotubes by catalytic chemical vapour deposition technique

Growth of high-density vertically aligned arrays of carbon nanotubes by plasma-assisted catalyst pretreatment

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