2014
DOI: 10.1380/ejssnt.2014.225
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Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

Abstract: Nano-carbons such as carbon nanotubes and graphenes are very promising as next-generation materials, and field effect transistors (FETs) can be used with nano-carbon channels. In these nano-carbon materials, carbon nanowalls (CNWs) are constructed with a few layers of graphene and exhibit properties similar to those of graphene. We have developed a self-aligned process for CNWs using grapho-epitaxy. We have grown CNW channels on several line and space patterns fabricated by electron beam lithography and reacti… Show more

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Cited by 5 publications
(2 citation statements)
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“…In the self-alignment process, nano-carbon materials are grown on the processed pattern on the substrate by grapho-epitaxy [48]. When suitable line and space patterns are used the surface diffusion results in self-alignment [39].…”
Section: Methodsmentioning
confidence: 99%
“…In the self-alignment process, nano-carbon materials are grown on the processed pattern on the substrate by grapho-epitaxy [48]. When suitable line and space patterns are used the surface diffusion results in self-alignment [39].…”
Section: Methodsmentioning
confidence: 99%
“…Vertically‐oriented carbonous nanoflakes (VCNFs) feature interesting structure and excellent properties such as a high specific surface area, long and thin edges, three‐dimensional network morphology, good electrical property as well as structural stability . These features make VCNFs promising for applications in batteries, solar cells, supercapacitors, field effect transistor, etc., as suggested by extensive research efforts …”
Section: Introductionmentioning
confidence: 99%