Carbon nitride films synthesized by combined ion-beam and laser-ablation processing

Ren, Zhiyuan; Du, Ying; Qiu, Ying; Wu, Jiada; Zhang, Ying; Xiong, Xia‐Xing; Li, Fuming

doi:10.1103/physrevb.51.5274

Cited by 126 publications

(32 citation statements)

References 18 publications

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“…20,21 These outcomes have inspired theoretical calculations [22][23][24][25][26] and experimental efforts to synthesize and distinguish this compound. [27][28][29][30][31][32][33][34][35][36][37][38] From the synthesis of amorphous C-N lms, 30,32,36 small crystallites have been discovered in some of these lms. 31,[33][34][35] C 3 N 4 is a chemically stable compound having a good thermal hardness and astonishing optical characteristics that make it suitable as a photocatalyst under visible light.…”

Section: Introductionmentioning

confidence: 99%

“…[27][28][29][30][31][32][33][34][35][36][37][38] From the synthesis of amorphous C-N lms, 30,32,36 small crystallites have been discovered in some of these lms. 31,[33][34][35] C 3 N 4 is a chemically stable compound having a good thermal hardness and astonishing optical characteristics that make it suitable as a photocatalyst under visible light. The pursuit of C 3 N 4 has potential for introducing new materials with band gap in the 2.6-3.0 eV range for energy, solar, and LED materials.…”

Section: Introductionmentioning

confidence: 99%

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Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

2014

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The linear and nonlinear optical susceptibilities of AA and AB stacking of the carbon nitride polymorph were calculated using the all electron full potential linear augmented plane wave method based on density functional theory. The complex part of the dielectric function is calculated using the recently modified Becke and Johnson (mBJ) approximation which gives a better optical gap in comparison to the Ceperley-Alder (CA) local density approximation, the Perdew-Burke-Ernzerhof generalized gradient approximation, and the Engel-Vosko generalized gradient approximation. The complex dielectric function and other optical constants like refractive index, absorption coefficient, reflectivity and energy loss function are calculated and discussed in detail. The calculated uniaxial anisotropy (À1.06 and À1.04)gives a maximum value of birefringence (À0.89 and À0.87) which increases the suitability of both AA and AB stacking for a large second harmonic generation. The calculated second order susceptibility tensor components |c 333 (u)| at the static limit are calculated to be (1.6 Â 10 À30 esu and 9.6 Â 10 À30 esu) respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

2014

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“…23 No Raman peaks were observed at ¾1360 cm 1 for sp 3 -hybridized carbon or at 1580 cm 1 for sp 2 -hydridized carbon, or at 2190 cm 1 , which is the triple-bonded carbon-nitrogen stretching mode Raman shift. 16 The peaks at 1416 and 1950 cm 1 are therefore not due to amorphous graphite but could imply the existence of double-bonded carbon-nitrogen in the carbon nitride film. 6 Fourier transform infrared spectroscopy of the carbon nitride films was performed in diffuse reflectance mode to provide complementary information on the nature of C-N bonds.…”

Section: Raman Spectrum and Ftir Spectrum Analysismentioning

confidence: 98%

“…sputtering in nitrogen, 8 -10 ion plating, 11 plasma-assisted chemical vapour deposition 12 -14 and laser ablation. 15,16 However, most of the films grown by these techniques did not have the correct C 3 N 4 stoichiometry and were nitrogen deficient. Furthermore, the carbon nitride films deposited in the early reports were largely amorphous.…”

Section: Introductionmentioning

confidence: 99%

Reactive atom synthesis and characterization of C3N4 crystalline films

Wee

Huan

et al. 1999

Surf. Interface Anal.

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Beta‐C3N4 crystalline films have been grown on Si(100) substrates by reactive atom vapour deposition. The lattice parameters of the β‐C3N4 crystalline phase, determined by x‐ray diffraction and transmission electron diffraction, respectively, are both in good agreement with the theoretically predicted β‐C3N4 structure lattice constant. X‐ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy and Raman spectroscopy experiments indicate the existence of single (CN) and double (CN) carbon–nitrogen bonds in the films. The total NC ratio in the films was determined by XPS to be 1.07, with the CN bonds (which form the β‐C3N4 crystalline phase) comprising up to 58% of the film. Raman spectra revealed two resolved peaks at 1224 cm−1 and 1310 cm−1, suggesting the formation of a fourfold coordinated CN bond, and another two peaks at 1416 cm−1 and 1950 cm−1 implying the existence of CN bonds. Fourier transform infrared spectroscopy also confirmed the presence of sp3‐ and sp2‐hybridized carbon atoms tetrahedrally and hexagonally bonded with nitrogen atoms. The root‐mean‐square roughness of the film surface was determined by atomic force microscopy to be 18.9 nm. Copyright © 1999 John Wiley & Sons, Ltd.

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“…This is stimulated by the extraordinary combined physical properties of this material. SiC-based devices have been developed for specific high-temperature [1], high-power [2] and high-frequency applications that are not suitable for Sior GaAs-based devices [3,4]. Other advantages are extreme hardness, chemical inertness and much higher thermal conductivity than silicon.…”

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confidence: 99%

Crystallization of ion-beam-synthesized SiC layer by thermal annealing

Chen

Cheung

et al. 1998

Applied Physics A: Materials Science & Processing

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Synthesis of β-phase silicon carbide (SiC) layers has been achieved by high-dose carbon ion beam implantation into (100) silicon wafers with two different ion implantation energies, 40 keV and 65 keV. Subsequent furnace annealing was carried out in N 2 at temperatures ranging from 600 to 1200 • C for 2 h. Rutherford backscattering spectrometry (RBS) analysis revealed carbon distribution and the formation of an SiC layer. Infrared spectroscopy (IR) exhibited a sharp absorption peak produced by the Si−C bond at 795 cm −1 with full width at half maximum (FWHM) of about 35 cm −1 . A layer of crystalline SiC was formed after annealing the as-implanted sample at 1000 • C for 2 h. The influence of annealing temperature on the surface morphology and the dynamics of the crystallization procedure was studied by atomic force microscopy (AFM). A study of grain size and roughness revealed that the morphology of the SiC layer was largely dependent on annealing temperature, and the average grain size increased as the annealing temperature was raised. At about 900 • C, a layer of nanocrystalline SiC was formed on the sample surface, containing columnar grains with a FWHM of tens of nanometers and a height of less than ten nanometers.The development of silicon carbide (SiC) for electronic applications has been the subject of intense research for a long time. This is stimulated by the extraordinary combined physical properties of this material. SiC-based devices have been developed for specific high-temperature [1], high-power [2] and high-frequency applications that are not suitable for Sior GaAs-based devices [3,4]. Other advantages are extreme hardness, chemical inertness and much higher thermal conductivity than silicon. This is of particular importance for solid state power devices. Moreover, the wide bandgap of SiC (greater than 2.2 eV) leads to extremely low leakage current and high breakdown voltage [9]. These properties make the material of great promise for optoelectronic devices.Techniques for the synthesis of SiC include r.f. glow discharge decomposition, reactive sputtering, chemical vapor deposition [5, 6] and ion implantation [7-9]. Among them, the ion beam synthesis (IBS) method has recently become more attractive for the formation of buried silicon carbide (SiC) materials because of the controllable processing parameters, such as composition and phase [10-12], which are important in determining the structural, optical and electrical properties. This method usually consists of high-dose ion implantation and subsequent high-temperature annealing. Since defect formation and amorphization are associated with the ion implantation process [13], it is necessary to remove these defects and recrystallize the sample by thermal annealing. Of all the existing polymorphs of SiC, α-SiC (6H polytype) and β-SiC (3C polytype) have the most technological interest. α-SiC is the one which appears to be most suitable for the development of SiC technology of integrated circuits, due to the obtaining of 5 cm wafers of single-crystal α-S...

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Carbon nitride films synthesized by combined ion-beam and laser-ablation processing

Cited by 126 publications

References 18 publications

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

Reactive atom synthesis and characterization of C3N4 crystalline films

Crystallization of ion-beam-synthesized SiC layer by thermal annealing

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Carbon nitride films synthesized by combined ion-beam and laser-ablation processing

Cited by 126 publications

References 18 publications

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C3N4)

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C3N4)

Reactive atom synthesis and characterization of C3N4 crystalline films

Crystallization of ion-beam-synthesized SiC layer by thermal annealing

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Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)