Carbon nitride thin films deposited by reactive plasma beam sputtering

Tessier, Pierre‐Yves; N'Guessan, Raymond Kre; Angleraud, B.; Fernandez, Vincent; Mubumbila, N.; Turban, G.

doi:10.1016/s0257-8972(99)00576-9

Cited by 20 publications

(6 citation statements)

References 21 publications

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“…The presence of triple CN bonds in these films have been already detected by FTIR spectroscopy [27] and also by several authors [10,17,35,36], the properties of transport of material are changed, the resistivity increases for high nitrogen values. In previous paper, some structural information on the deposited a-CN films is obtained using Raman spectroscopy [37], a broad peak between 1200 and 1700 cm À1 is detected. The positions of the two Gaussian shape peaks are found around 1360 cm À1 (D band-disorder) and 1560 cm À1 (G band-mixture of graphitic) [38].…”

Section: Discussionmentioning

confidence: 99%

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

et al. 2005

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Section: Discussionmentioning

confidence: 99%

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

et al. 2005

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“…Researchers have performed systematic structure analysis on sputter-coated carbon nitride films and examined their properties on a microstructural basis. To understand the fundamental properties of a-C:N films, some investigations on their electrical, optical, mechanical, and tribological properties have been performed [1][2][3][4][5][6][7]. Certain thermal effects on a-C:N films were also identified [2].…”

Section: Introductionmentioning

confidence: 99%

“…It correlates the structural and physicochemical properties with the decomposition mechanisms, kinetics, and stability. The chief value of quantitative thermal information is in helping one to understand the changes in the kinetic parameters with temperature and time, because it is closely related to the fundamental structural composition [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Thermal decomposition kinetics of amorphous carbon nitride and carbon films

Zhang

Gong

Wang

2002

J. Phys.: Condens. Matter

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Kinetic thermal degradation of amorphous carbon and carbon nitride films is studied. Significantly improved thermal stability was observed for films intensified with C-N, C=N, and C≡N bonds. When the N 2 % (percentage of nitrogen) in Ar/N 2 during film deposition was varied from 0 to 30 at pressures of 3×10 −3 and 16×10 −3 Torr, the onset decomposition temperatures increased from 396 to 538 and from 340 to 360 • C, while the apparent activation energy E at 60% residual weight increased from 149 to 158 and from 96 to 120 kJ mol −1 , respectively. A change in the thermal stability was observed when the N 2 % reached 50. The films of higher bonding ratio and structural integration showed a single-step decomposition mechanism. They had E values decreasing with the decomposition process, following convextrend isothermal weight-loss curves. Films deposited using low-energy carbon plasma had higher contents of loosely bonded molecules; this resulted in a seemingly two-step decomposition and E increasing with weight loss over a certain range. They followed concave-trend isothermal weight-loss curves. The overall decomposition mechanism could best be expressed in terms of nth-order reactions with the value of n closely related to film structures and reaction temperatures. Lower n-values are related to densely packed structure and higher temperature due to the increased diffusion barrier of the products.

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“…As the gas mixture is changed from 50% N 2 to pure N 2 at a working pressure of 6 mTorr, the deposition rate increases from 3.65 to 5.18 nm/ min. The increase in deposition rate with N 2 partial pressure has already been observed in magnetron sputtering 16,17) and Zheng et al also observed that deposition rate increased as the working pressure was increased from 2.5 to 10 mTorr. 18) One possible explanation for the increment in the CN x films growth is the sputtering yield of the graphite target in the nitrogen flux.…”

Section: Resultsmentioning

confidence: 53%

Effect of C_xN_y Molecular Species on Carbon Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering

Roh

Choi

et al. 2008

jjap

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Carbon nitride films were deposited on Si(100) substrates by radio frequency (RF) magnetron sputtering at different working pressures and gas ratios. The effect of the gas pressure on the molecular structure of the carbon nitride films and C x N y molecular behavior has been discussed. A quadrupole mass spectrometer (QMS) was fitted with a chamber to investigate C x N y molecular species in the gas phase. The composition and bonding were analyzed by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). An increase in film growth rate was observed with increasing working pressure and nitrogen proportion in the sputtering gas. However, the film growth rate decreased when the working pressures were over $10 mTorr. The N/C ratios in the CN x film were in the range of 0.52 -0.67 and increased with working pressure. The XPS and FTIR spectra confirmed that a decrease in working pressure resulted in an increase in the number of sp 3 C-N bonds. It may be concluded that the decrease in C 2 N molecules containing a high proportion of carbon and the increase in CN 2 containing a high proportion of nitrogen due to the increase in working pressure affected N incorporation in the films.

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Carbon nitride thin films deposited by reactive plasma beam sputtering

Cited by 20 publications

References 21 publications

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

Thermal decomposition kinetics of amorphous carbon nitride and carbon films

Effect of C_xN_y Molecular Species on Carbon Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering

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Carbon nitride thin films deposited by reactive plasma beam sputtering

Cited by 20 publications

References 21 publications

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

Nitrogen effect on the electrical properties of CNx thin films deposited by reactive magnetron sputtering

Thermal decomposition kinetics of amorphous carbon nitride and carbon films

Effect of CxNy Molecular Species on Carbon Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering

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Effect of C_xN_y Molecular Species on Carbon Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering