Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Mitsuhara, Manabu; Sato, Tomonari; Yamamoto, Norio; Fukano, H.; Kondo, Y.

doi:10.1016/j.jcrysgro.2009.06.011

Cited by 10 publications

(2 citation statements)

References 18 publications

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“…It has been shown that phase separation‐free In x Ga 1− x As y Sb 1− y with low indium (In) content (<0.26) can be prepared by molecular beam epitaxy (MBE) in the immiscibility gap by random alloy growth. However, growing In x Ga 1− x As y Sb 1− y with high In content in the immiscibility gap, which is needed for broken type‐II band alignment with InAs, remains a problem because of poor morphology and phase separation . Such growth issues hinder the application of high‐In‐content InGaAsSb and related quantum well, SL structure.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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Infrared optoelectronic devices based on type‐II superlattice structures of III–V semiconductor materials have progressed significantly during the past decades. Exploring and further expanding the material space is of great significance for the development of infrared applications. Herein, a superlattice structure based on InAs(Sb)/InxGa1−xAsySb1−y grown using a fractional monolayer alloy process to control the superlattice composition and structure is presented. High‐order satellite peaks with a narrow full width at half maximum (31 arcs) in the X‐ray diffraction patterns indicate the good crystal quality of the superlattices. Transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) analysis validate the fractional monolayer alloy growth method. Photoluminescence measurements and k·p model calculations reveal the superior optical properties of the superlattice (sevenfold higher intensity than that of InAs/GaSb). In addition, the flexible control over the superlattice structure afforded by the method allows miniband engineering to cover the mid‐wavelength and long‐wavelength infrared regions. This work highlights the great potential of InAs(Sb)/InxGa1−xAsySb1−y superlattices in infrared optoelectronic devices.

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Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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“…Tris-dimethylamino antimony (TrisSb) provides an alternate Sb-source to TMSb, which can potentially decrease the incorporation of carbon because the surface reaction of the dimethylamino group eliminates the Sb-C direct bonds which are associated with the reduction in carbon incorporation [15]. The use of the TrisSb source, has been shown to reduce the carbon incorporation for GaSb material [16], and is expected to lead to a lower background carbon concentration for the (In)GaAsSbN materials.…”

Section: Dilute-n-sb Materialsmentioning

confidence: 99%

(Invited) Dilute-Nitride-Antimonide Materials Grown by MOVPE for Multi-Junction Solar Cell Application

Mawst

Kim

et al. 2015

ECS Trans.

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We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilute-nitride-antimonide materials on GaAs substrates. The lowest background carbon concentration (~ 5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (~525oC). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.

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Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition

Hoshi¹,

Sugiyama²,

Yokoyama³

et al. 2013

Journal of Crystal Growth

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Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Cited by 10 publications

References 18 publications

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

(Invited) Dilute-Nitride-Antimonide Materials Grown by MOVPE for Multi-Junction Solar Cell Application

Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition

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Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

Cited by 10 publications

References 18 publications

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

(Invited) Dilute-Nitride-Antimonide Materials Grown by MOVPE for Multi-Junction Solar Cell Application

Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice